Journal
SCIENCE ADVANCES
Volume 8, Issue 27, Pages -Publisher
AMER ASSOC ADVANCEMENT SCIENCE
DOI: 10.1126/sciadv.abn4479
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Funding
- U.S. Department of Defense through the Vannevar Bush Faculty Fellowship program [N00014-16-1-2814]
- CATS Energy Frontier Research Center - Department of Energy, Basic Energy Sciences [DE-AC02-06CH11357]
- U.S. Department of Energy [DEFG02-02ER45994]
- U.S. National Science Foundation Graduate Research Fellowship Program [1650114]
- National Science Foundation [DMR 1720256]
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A thin film of cadmium arsenide can exhibit the characteristics of a three-dimensional topological insulator, with experimental signatures observed through quantum capacitance. By leveraging the flexibility of heterostructures, researchers have demonstrated a method to control the energy of topological surface states in cadmium arsenide, opening up new avenues for engineering topological insulators based on this material.
A bulk crystal of cadmium arsenide is a three-dimensional Dirac semimetal, but, in a thin film, it can behave like a three-dimensional topological insulator. This tunability provides unique opportunities to manipulate and explore a topological insulator phase. However, an obstacle to engineering such tunability is the subtlety of transport-based discriminants for topological phases. In this work, the quantum capacitance of cadmium arsenide-based heterostructures provides two direct experimental signatures of three-dimensional topological insulator physics: an insulating three-dimensional bulk and a Landau level at zero energy that does not disperse in a magnetic field. We proceed to join our ability to see these fingerprints of the topological surface states with flexibility afforded by our epitaxial heterostructures to demonstrate a route toward controlling the energy of the Dirac nodes on each surface. These results point to new avenues for engineering topological insulators based on cadmium arsenide.
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