Tantalum Suboxide Films with Tunable Composition and Electrical Resistivity Deposited by Reactive Magnetron Sputtering

Tantalum-based films with tailored composition, density, and electrical resistivity are of interest for next generation hohlraums for magnetized indirect-drive inertial confinement fusion. Here, we use reactive direct-current magnetron sputtering to deposit tantalum suboxide films with O content in the range of 46-71 at.%. In contrast to a common approach involving varying reactive gas contents, compositional control is achieved kinetically by changing the total chamber pressure and the deposition rate, while keeping the working gas mix of Ar-5%O-2 constant. The resultant films are X-ray amorphous with electrical resistivity varying by over seven orders of magnitude. The dominant conduction mechanism changes from metallic to activated tunneling above similar to 55 at.% of O, which is characterized by a sharp increase in resistivity and a decrease in the carrier density at low temperatures.

Automated summary

In this study, tantalum suboxide films with controlled composition were deposited using reactive direct-current magnetron sputtering. The films exhibited a wide range of electrical resistivity variations and a sharp change in resistivity and carrier density at an oxygen content of approximately 55%.