4.7 Article

67 GHz light-trapping-structure germanium photodetector supporting 240 Gb/s PAM-4 transmission

Journal

PHOTONICS RESEARCH
Volume 10, Issue 9, Pages 2165-2171

Publisher

CHINESE LASER PRESS
DOI: 10.1364/PRJ.455291

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Funding

  1. National Key Research and Development Program of China [2019YFB2205200, 2019YFB1803602]

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A light-trapping-structure vertical Ge photodetector with high bandwidth and responsivity is demonstrated, achieving clear signal transmission performance.
A light-trapping-structure vertical Ge photodetector (PD) is demonstrated. In the scheme, a 3 mu m radius Ge mesa is fabricated to constrain the optical signal in the circular absorption area. Benefiting from the light-trapping structure, the trade-off between bandwidth and responsivity can be relaxed, and high opto-electrical bandwidth and high responsivity are achieved simultaneously. The measured 3 dB bandwidth of the proposed PD is around 67 GHz, and the responsivity is around 1.05 A/W at wavelengths between 1520 and 1560 nm. At 1580 nm, the responsivity is still over 0.78 A/W. A low dark current of 6.4 nA is also achieved at -2 V bias voltage. Based on this PD, a clear eye diagram of 100 GBaud four-level pulse amplitude modulation (PAM-4) is obtained. With the aid of digital signal processing, 240 Gb/s PAM-4 signal back-to-back transmission is achieved with a bit error ratio of 1.6 x 10-2. After 1 km and 2 km fiber transmission, the highest bit rates are 230 and 220 Gb/s, respectively. (c) 2022 Chinese Laser Press

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