Demonstration of III-Nitride Red LEDs on Si Substrates via Strain-Relaxed Template by InGaN Decomposition Layer

A III-nitride red LED with an active region temperature of 835 degrees C on a Si substrate utilizing a strain-relaxed template (SRT) is demonstrated. The peak wavelength blueshifts from 670 nm at 1 A/cm(2) to 636 nm at 150 A/cm(2). The on-wafer external quantum efficiency was 0.021% at 7 A/cm(2) with an emission wavelength of 655 nm. The LED grown on a Si substrate exhibited a 116 nm redshift when compared to a co-loaded LED grown on sapphire. This is attributed to the difference in strain state for the III-nitride layers grown on Si compared to sapphire, allowing for more indium to be incorporated in the LED grown on Si. This suggests efficient III-nitride red LEDs and mu LEDs on Si with a SRT can be realized with further material, device structure, and processing optimizations.

Automated summary

A high-temperature III-nitride red LED grown on a Si substrate utilizing a strain-relaxed template (SRT) has been demonstrated, achieving higher external quantum efficiency and a wider emission wavelength range.