Strain Relaxation Effect on the Peak Wavelength of Blue InGaN/GaN Multi-Quantum Well Micro-LEDs

In this paper, the edge strain relaxation of InGaN/GaN MQW micro-pillars is studied. Micro-pillar arrays with a diameter of 3-20 mu m were prepared on a blue GaN LED wafer by inductively coupled plasma (ICP) etching. The peak wavelength shift caused by edge strain relaxation was tested using micro-LED pillar array room temperature photoluminescence (PL) spectrum measurements. The results show that there is a nearly 3 nm peak wavelength shift between the micro-pillar arrays, caused by a high range of the strain relaxation region in the small size LED pillar. Furthermore, a 19 mu m micro-LED pillar's Raman spectrum was employed to observe the pillar strain relaxation. It was found that the Raman E-2(H) mode at the edge of the micro-LED pillar moved to high frequency, which verified an edge strain relaxation of = 0.1%. Then, the exact strain and peak wavelength distribution of the InGaN quantum wells were simulated by the finite element method, which provides effective verification of our PL and Raman strain relaxation analysis. The results and methods in this paper provide good references for the design and analysis of small-size micro-LED devices.

Automated summary

This paper investigates the edge strain relaxation of InGaN/GaN MQW micro-pillars. The results show a significant peak wavelength shift between micro-pillar arrays caused by a high range of strain relaxation. Raman spectrum observation and finite element method simulation provide effective verification of the strain relaxation analysis, offering references for the design and analysis of small-size micro-LED devices.