Selective Electron Beam Patterning of Oxygen-Doped WSe2 for Seamless Lateral Junction Transistors

Surface charge transfer doping (SCTD) using oxygen plasma to form a p-type dopant oxide layer on transition metal dichalcogenide (TMDs) is a promising doping technique for 2D TMDs field-effect transistors (FETs). However, patternability of SCTD is a key challenge to effectively switch FETs. Herein, a simple method to selectively pattern degenerately p-type (p(+))-doped WSe2 FETs via electron beam (e-beam) irradiation is reported. The effect of the selective e-beam irradiation is confirmed by the gate-tunable optical responses of seamless lateral p(+)-p diodes. The OFF state of the devices by inducing trapped charges via selective e-beam irradiation onto a desired channel area in p(+)-doped WSe2, which is in sharp contrast to globally p(+)-doped WSe2 FETs, is realized. Selective e-beam irradiation of the PMMA-passivated p(+)-WSe2 enables accurate control of the threshold voltage (V-th) of WSe2 devices by varying the pattern size and e-beam dose, while preserving the low contact resistance. By utilizing hBN as the gate dielectric, high-performance WSe2 p-FETs with a saturation current of -280 mu A mu m(-1) and on/off ratio of 10(9) are achieved. This study's technique demonstrates a facile approach to obtain high-performance TMD p-FETs by e-beam irradiation, enabling efficient switching and patternability toward various junction devices.

Automated summary

This study presents a simple method to selectively pattern degenerately p-type-doped WSe2 FETs through electron beam irradiation, achieving the OFF state of the devices. The threshold voltage of the devices can be accurately controlled by varying the pattern size and e-beam dose, while maintaining low contact resistance. High-performance WSe2 p-FETs are achieved by using hBN as the gate dielectric.