4.6 Article

Ultralow Lattice Thermal Conductivity and High Thermoelectric Figure of Merit in Dually Substituted Cu12Sb4S13 Tetrahedrites

Journal

ADVANCED ELECTRONIC MATERIALS
Volume 8, Issue 10, Pages -

Publisher

WILEY
DOI: 10.1002/aelm.202200110

Keywords

dual substitution; figure of merit; tetrahedrites; thermoelectric materials; ultralow lattice thermal conductivity

Funding

  1. National Natural Science Foundation of China [1217040291, 51972307]
  2. Anhui Provincial Natural Science Foundation [2008085MA18]

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The thermoelectric properties of dually substituted Cu12-xInxSb4S12.8Se0.2 tetrahedrites were investigated. The results showed that the dual substitution of In for Cu and Se for S not only enhanced the thermopower, but also significantly reduced the lattice thermal conductivity. By enhancing phonon scattering through point defects, an ultralow thermal conductivity was achieved, leading to a high figure of merit in the dually substituted sample.
The thermoelectric properties of dually substituted Cu12-xInxSb4S12.8Se0.2 tetrahedrites are studied in temperature range from 300 to 723 K. The results indicate that dual substitution of In for Cu and Se for S not only causes the enhancement of thermopower S but also gives rise to a significant decrease in lattice thermal conductivity kappa(L). An ultralow kappa(L) approximate to 0.2 W m(-1) K-1 is obtained at 723 K in Cu11.95In0.05Sb4S12.8Se0.2 sample due to the enhanced phonon scattering mainly by point defects. Consequently, a high figure of merit ZT(max) approximate to 1.0 is achieved in Cu11.95In0.05Sb4S12.8Se0.2 sample, which is approximate to 56% larger than that of pristine Cu12Sb4S13, indicating that dual substitution is effective in boosting the thermoelectric properties of tetrahedrites.

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