Nonvolatile Logic-in-Memory Computing based on Solution-Processed CuI Memristor

Memristors are intensively studied as being regarded as the critical components to realize the in-memory computing paradigm. A novel electrochemical metallization memristor based on solution-processed Pt/CuI/Cu structure is proposed and demonstrated in this work, with a high resistance switching ratio of 1.53 x 10(7). Owing to the efficient drift paths provided by Cu vacancies for Cu cations in CuI, very small operating voltages (V-set = 0.64 V and V-reset = -0.19 V) are characterized, contributing to ultralow standby power consumption of 9 fW and per set transition of 8.73 mu W. Using CuI memristor arrays, a set of Boolean logic operations and a half-adder are implemented. Moreover, by building the model for a 75 x 48 one-transistor-one-memristor array, the feasibility of hardware encryption and decryption for images is verified. All these demonstrate that solution-processed CuI memristors possess great potential in constructing energy-efficient logic-in-memory computing architectures.

Automated summary

A novel electrochemical metallization memristor based on solution-processed Pt/CuI/Cu structure is proposed and demonstrated in this work. It has high resistance switching ratio and low power consumption, enabling Boolean logic operations and image encryption and decryption.