Memory Effects in Nanolaminates of Hafnium and Iron Oxide Films Structured by Atomic Layer Deposition

HfO2 and Fe2O3 thin films and laminated stacks were grown by atomic layer deposition at 350 degrees C from hafnium tetrachloride, ferrocene, and ozone. Nonlinear, saturating, and hysteretic magnetization was recorded in the films. Magnetization was expectedly dominated by increasing the content of Fe2O3. However, coercive force could also be enhanced by the choice of appropriate ratios of HfO2 and Fe2O3 in nanolaminated structures. Saturation magnetization was observed in the measurement temperature range of 5-350 K, decreasing towards higher temperatures and increasing with the films' thicknesses and crystal growth. Coercive force tended to increase with a decrease in the thickness of crystallized layers. The films containing insulating HfO2 layers grown alternately with magnetic Fe2O3 exhibited abilities to both switch resistively and magnetize at room temperature. Resistive switching was unipolar in all the oxides mounted between Ti and TiN electrodes.

Automated summary

HfO2 and Fe2O3 thin films and laminated stacks were grown by atomic layer deposition, and nonlinear, saturating, and hysteretic magnetization behavior was observed. Magnetization was mainly influenced by the content of Fe2O3, but the choice of appropriate ratios of HfO2 and Fe2O3 could enhance coercive force.