Stimulated Emission up to 2.75 μm from HgCdTe/CdHgTe QW Structure at Room Temperature

Heterostructures with thin Hg(Cd)Te/CdHgTe quantum wells (QWs) are attractive for the development of mid-infrared interband lasers. Of particular interest are room-temperature operating emitters for the short-wavelength infrared range (SWIR, typically defined as 1.7-3 mu m). In this work, we report on the observation of stimulated emission (SE) in the 2.65-2.75 mu m wavelength range at room temperature in an optically pumped HgCdTe QW laser heterostructure. We study a series of three samples with lengths ranging from 2.5 to 7 mm and discuss the effects related to the non-uniformity of the excitation beam profile. SE threshold intensity and the magnitude of pump-induced carrier heating are found to be effectively dependent on the chip size, which should be accounted for in possible designs of HgCdTe-based optical converters. We also pay attention to the problem of active medium engineering in order to push the SE wavelength towards the 3-5 mu m atmospheric window and to lower the SE threshold.

Automated summary

Stimulated emission in the 2.65-2.75 μm wavelength range at room temperature was observed in HgCdTe quantum well laser heterostructures. The effects of non-uniform excitation beam profile on SE threshold and carrier heating were studied.