Solution Combustion Synthesis of Hafnium-Doped Indium Oxide Thin Films for Transparent Conductors

Indium oxide (In2O3)-based transparent conducting oxides (TCOs) have been widely used and studied for a variety of applications, such as optoelectronic devices. However, some of the more promising dopants (zirconium, hafnium, and tantalum) for this oxide have not received much attention, as studies have mainly focused on tin and zinc, and even fewer have been explored by solution processes. This work focuses on developing solution-combustion-processed hafnium (Hf)-doped In2O3 thin films and evaluating different annealing parameters on TCO's properties using a low environmental impact solvent. Optimized TCOs were achieved for 0.5 M% Hf-doped In2O3 when produced at 400 degrees C, showing high transparency in the visible range of the spectrum, a bulk resistivity of 5.73 x 10(-2) omega.cm, a mobility of 6.65 cm(2)/V.s, and a carrier concentration of 1.72 x 10(19) cm(-3). Then, these results were improved by using rapid thermal annealing (RTA) for 10 min at 600 degrees C, reaching a bulk resistivity of 3.95 x 10 (-3) omega.cm, a mobility of 21 cm(2)/V.s, and a carrier concentration of 7.98 x 10(19) cm(-3), in air. The present work brings solution-based TCOs a step closer to low-cost optoelectronic applications.

Automated summary

This study focuses on developing solution-combustion-processed hafnium-doped In2O3 thin films and evaluating the effects of different annealing parameters on the properties of transparent conducting oxides. The optimized TCOs exhibit high transparency, low resistivity, and good carrier mobility, bringing solution-based TCOs a step closer to low-cost optoelectronic applications.