Resistive Switching and Synaptic Characteristics in ZnO/TaON-Based RRAM for Neuromorphic System

We fabricated an ITO/ZnO/TaON/TaN device as nonvolatile memory (NVM) with resistive switching for complementary metal-oxide-semiconductor (CMOS) compatibility. It is appropriate for the age of big data, which demands high speed and capacity. We produced a TaON layer by depositing a ZnO layer on a TaN layer using an oxygen-reactive radio frequency (RF) sputtering system. The bi-layer formation of ZnO and TaON interferes with the filament rupture after the forming process and then raises the current level slightly. The current levels were divided into high- and low-compliance modes. The retention, endurance, and pulse conductance were verified with a neuromorphic device. This device was stable and less consumed when it was in low mode rather than high mode.

Automated summary

We fabricated a nonvolatile memory device with resistive switching for CMOS compatibility, suitable for the era of big data that requires high speed and capacity. By using a bi-layer formation of ZnO and TaON, the device achieves a slightly higher current level and is divided into high- and low-compliance modes. Stability and lower power consumption were observed in the low mode.