Gallium Oxide Nanostructures: A Review of Synthesis, Properties and Applications

Gallium oxide, as an emerging semiconductor, has attracted a lot of attention among researchers due to its high band gap (4.8 eV) and a high critical field with the value of 8 MV/cm. This paper presents a review on different chemical and physical techniques for synthesis of nanostructured beta-gallium oxide, as well as its properties and applications. The polymorphs of Ga2O3 are highlighted and discussed along with their transformation state to beta-Ga2O3. Different processes of synthesis of thin films, nanostructures and bulk gallium oxide are reviewed. The electrical and optical properties of beta-gallium oxide are also highlighted, based on the synthesis methods, and the techniques for tuning its optical and electrical properties compared. Based on this information, the current, and the possible future, applications for beta-Ga2O3 nanostructures are discussed.

Automated summary

This paper reviews the synthesis techniques, properties, and applications of gallium oxide, focusing on the polymorphs of Ga2O3 and their transformation to beta-Ga2O3. Various processes for synthesizing thin films, nanostructures, and bulk gallium oxide are examined, along with the electrical and optical properties of beta-gallium oxide. Discussions are also provided on the current and potential future applications of beta-Ga2O3 nanostructures.