Related references
Note: Only part of the references are listed.Disorders in graphene: types, effects and control techniques-a review
Elma Elizaba Mathew et al.
CARBON LETTERS (2022)
An overview of conventional and new advancements in high kappa thin film deposition techniques in metal oxide semiconductor devices
Premdass Devaray et al.
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS (2022)
Graphene exfoliation with supercritical fluids
Rodolfo Morales Ibarra et al.
CARBON LETTERS (2021)
ALD-ZrO2 gate dielectric with suppressed interfacial oxidation for high performance MoS2 top gate MOSFETs
Wen Hsin Chang et al.
JAPANESE JOURNAL OF APPLIED PHYSICS (2021)
A short review on electrochemical exfoliation of graphene and graphene quantum dots
Wan Hazman Danial et al.
CARBON LETTERS (2021)
MoS2 doping by atomic layer deposition of high-k dielectrics using alcohol as process oxidants
Whang Je Woo et al.
APPLIED SURFACE SCIENCE (2021)
Surface functionalization toward top-gated monolayer MoS2 field-effect transistors with ZrO2/Al2O3 as composite dielectrics
Tao Guo et al.
JOURNAL OF ALLOYS AND COMPOUNDS (2021)
Promises and prospects of two-dimensional transistors
Yuan Liu et al.
NATURE (2021)
A wafer-scale van der Waals dielectric made from an inorganic molecular crystal film
Kailang Liu et al.
NATURE ELECTRONICS (2021)
Dramatic Reduction of Contact Resistance via Ultrathin LiF in Two-Dimensional MoS2 Field Effect Transistors
Hyunmin Cho et al.
NANO LETTERS (2021)
Wafer-Scale Oxygen-Doped MoS2 Monolayer
Zheng Wei et al.
SMALL METHODS (2021)
Photoinduced hydrophilic behavior of TiO2 thin film on Si substrate
Aida Rudakova et al.
JOURNAL OF ALLOYS AND COMPOUNDS (2021)
Optimization and integration of ultrathin e-beam grown HfO2 gate dielectrics in MoS2 transistors
Kolla Lakshmi Ganapathi et al.
JOURNAL OF PHYSICS D-APPLIED PHYSICS (2021)
High-performance flexible nanoscale transistors based on transition metal dichalcogenides
Alwin Daus et al.
NATURE ELECTRONICS (2021)
Optimizing Al-doped ZrO2 as the gate dielectric for MoS2 field-effect transistors
Xingjuan Song et al.
NANOTECHNOLOGY (2020)
Improved Interfacial and Electrical Properties of MoS2 Transistor With High/Low-Temperature Grown Hf0.5Al0.5O as Top-Gate Dielectric
Xin-Yuan Zhao et al.
IEEE ELECTRON DEVICE LETTERS (2020)
Improved Contacts and Device Performance in MoS2 Transistors Using a 2D Semiconductor Interlayer
Kraig Andrews et al.
ACS NANO (2020)
Ni doping significantly improves dielectric properties of La2O3 films
Shuan Li et al.
JOURNAL OF ALLOYS AND COMPOUNDS (2020)
Atomic layer deposition of a uniform thin film on two-dimensional transition metal dichalcogenides
Taewook Nam et al.
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A (2020)
Effect of Structural Phases on Mechanical Properties of Molybdenum Disulfide
Sadegh Imani Yengejeh et al.
ACS OMEGA (2020)
Na2SO4-Regulated High-Quality Growth of Transition Metal Dichalcogenides by Controlling Diffusion
Yuanyuan Jin et al.
CHEMISTRY OF MATERIALS (2020)
Improved dielectric properties of La2O3-ZrO2 bilayer films for novel gate dielectrics
Shuan Li et al.
VACUUM (2020)
2D Semiconductor Transistors with Van der Waals Oxide MoO3as Integrated High-κ Gate Dielectric
Brian A. Holler et al.
ADVANCED ELECTRONIC MATERIALS (2020)
Large-scale flexible and transparent electronics based on monolayer molybdenum disulfide field-effect transistors
Na Li et al.
NATURE ELECTRONICS (2020)
Seamlessly Splicing Metallic SnxMo1-xS2 at MoS2 Edge for Enhanced Photoelectrocatalytic Performance in Microreactor
Gonglei Shao et al.
ADVANCED SCIENCE (2020)
Twist Angle-Dependent Optical Responses in Controllably Grown WS2 Vertical Homojunctions
Gonglei Shao et al.
CHEMISTRY OF MATERIALS (2020)
Toward Mass Production of CVD Graphene Films
Bing Deng et al.
ADVANCED MATERIALS (2019)
Effects of Trapped Charges in Gate Dielectric and High-k Encapsulation on Performance of MoS2 Transistor
Jing-Ping Xu et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2019)
How 2D semiconductors could extend Moore’s law
Ming-Yang Li et al.
NATURE (2019)
Advances in La-Based High-k Dielectrics for MOS Applications
L. N. Liu et al.
COATINGS (2019)
Shape-Engineered Synthesis of Atomically Thin 1T-SnS2 Catalyzed by Potassium Halides
Gonglei Shao et al.
ACS NANO (2019)
Effect of Fe impurity on performance of La2O3 as a high k gate dielectric
Shuan Li et al.
CERAMICS INTERNATIONAL (2019)
Near-ideal subthreshold swing MoS2 back-gate transistors with an optimized ultrathin HfO2 dielectric layer
Yu Pan et al.
NANOTECHNOLOGY (2019)
Controllable preparation of 2D metal-semiconductor layered metal dichalcogenides heterostructures
Gonglei Shao et al.
SCIENCE CHINA-CHEMISTRY (2019)
Bi-layer high-k dielectrics of Al2O3/ZrO2 to reduce damage to MoS2 channel layers during atomic layer deposition
Whang Je Woo et al.
2D MATERIALS (2019)
Plasma-Enhanced Atomic Layer Deposition of HfO2 on Monolayer, Bilayer, and Trilayer MoS2 for the Integration of High-κ Dielectrics in Two-Dimensional Devices
Katherine M. Price et al.
ACS APPLIED NANO MATERIALS (2019)
Structures and characteristics of atomically thin ZrO2 from monolayer to bilayer and two-dimensional ZrO2-MoS2 heterojunction
Junhui Weng et al.
RSC ADVANCES (2019)
Schottky Barrier Height Engineering for Electrical Contacts of Multilayered MoS2 Transistors with Reduction of Metal-Induced Gap States
Gwang-Sik Kim et al.
ACS NANO (2018)
Low-temperature fabrication of sputtered high-k HfO2 gate dielectric for flexible a-IGZO thin film transistors
Rihui Yao et al.
APPLIED PHYSICS LETTERS (2018)
Dual-gate MoS2 transistors with sub-10nm top-gate high-k dielectrics
Pavel Bolshakov et al.
APPLIED PHYSICS LETTERS (2018)
Atomic layer deposition of sub-10 nm high-K gate dielectrics on top-gated MoS2 transistors without surface functionalization
Yu-Shu Lin et al.
APPLIED SURFACE SCIENCE (2018)
High-k Gate Dielectrics for Emerging Flexible and Stretchable Electronics
Binghao Wang et al.
CHEMICAL REVIEWS (2018)
Interfacial engineering in graphene bandgap
Xiaozhi Xu et al.
CHEMICAL SOCIETY REVIEWS (2018)
Monolayer Molybdenum Disulfide Transistors with Single-Atom-Thick Gates
Yibo Zhu et al.
NANO LETTERS (2018)
Effects of HfO2 encapsulation on electrical performances of few-layered MoS2 transistor with ALD HfO2 as back-gate dielectric
Jingping Xu et al.
NANOTECHNOLOGY (2018)
Ultrastable In-Plane 1T-2H MoS2 Heterostructures for Enhanced Hydrogen Evolution Reaction
Shuai Wang et al.
ADVANCED ENERGY MATERIALS (2018)
Evaluation of border traps and interface traps in HfO2/MoS2 gate stacks by capacitance-voltage analysis
Peng Zhao et al.
2D MATERIALS (2018)
Recent Progress on High-Capacitance Polymer Gate Dielectrics for Flexible Low-Voltage Transistors
Benjamin Nketia-Yawson et al.
ADVANCED FUNCTIONAL MATERIALS (2018)
Improved Hysteresis and Reliability of MoS2 Transistors With High-Quality CVD Growth and Al2O3 Encapsulation
Yury Yu. Illarionov et al.
IEEE ELECTRON DEVICE LETTERS (2017)
Electrical characterization of top-gated molybdenum disulfide field-effect-transistors with high-k dielectrics
Pavel Bolshakov et al.
MICROELECTRONIC ENGINEERING (2017)
Investigation of chemical vapour deposition MoS2 field effect transistors on SiO2 and ZrO2 substrates
Xi Liu et al.
NANOTECHNOLOGY (2017)
Process-property relationship in high-k ALD SrTiO3 and BaTiO3: a review
J. H. Shim et al.
JOURNAL OF MATERIALS CHEMISTRY C (2017)
2D transition metal dichalcogenides
Sajedeh Manzeli et al.
NATURE REVIEWS MATERIALS (2017)
Effect of Dielectric Interface on the Performance of MoS2 Transistors
Xuefei Li et al.
ACS APPLIED MATERIALS & INTERFACES (2017)
Uniform Growth of Sub-5-Nanometer High-κ Dielectrics on MoS2 Using Plasma-Enhanced Atomic Layer Deposition
Katherine M. Price et al.
ACS APPLIED MATERIALS & INTERFACES (2017)
Probing Interface Defects in Top-Gated MoS2 Transistors with Impedance Spectroscopy
Peng Zhao et al.
ACS APPLIED MATERIALS & INTERFACES (2017)
Atomic Layer Deposition on 2D Materials
Hyun Gu Kim et al.
CHEMISTRY OF MATERIALS (2017)
Effects of annealing on top-gated MoS2 transistors with HfO2 dielectric
Peng Zhao et al.
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B (2017)
Improved integration of ultra-thin high-k dielectrics in few-layer MoS2 FET by remote forming gas plasma pretreatment
Xiao Wang et al.
APPLIED PHYSICS LETTERS (2017)
Interface Properties of Atomic-Layer-Deposited Al2O3 Thin Films on Ultraviolet/Ozone-Treated Multilayer MoS2 Crystals
Seonyoung Park et al.
ACS APPLIED MATERIALS & INTERFACES (2016)
Effect of Al2O3 Deposition on Performance of Top-Gated Monolayer MoS2-Based Field Effect Transistor
Jeong-Gyu Song et al.
ACS APPLIED MATERIALS & INTERFACES (2016)
Laser Direct Writing Process for Making Electrodes and High-k Sol-Gel ZrO2 for Boosting Performances of MoS2 Transistors
Hyuk-Jun Kwon et al.
ACS APPLIED MATERIALS & INTERFACES (2016)
Improved Gate Dielectric Deposition and Enhanced Electrical Stability for Single-Layer MoS2 MOSFET with an AlN Interfacial Layer
Qingkai Qian et al.
SCIENTIFIC REPORTS (2016)
Tailoring the Electrical Properties of HfO2 MOS-Devices by Aluminum Doping
Albena Paskaleva et al.
ACS APPLIED MATERIALS & INTERFACES (2015)
Top-gated chemical vapor deposited MoS2 field-effect transistors on Si3N4 substrates
A. Sanne et al.
APPLIED PHYSICS LETTERS (2015)
Interface/border trap characterization of Al2O3/AlN/GaN metal-oxide-semiconductor structures with an AlN interfacial layer
Shenghou Liu et al.
APPLIED PHYSICS LETTERS (2015)
Integration of High-k Oxide on MoS2 by Using Ozone Pretreatment for High-Performance MoS2 Top-Gated Transistor with Thickness-Dependent Carrier Scattering Investigation
Jingli Wang et al.
SMALL (2015)
HfO2 on UV-O3 exposed transition metal dichalcogenides: interfacial reactions study
Angelica Azcatl et al.
2D MATERIALS (2015)
Structure and Electrical Properties of Al-Doped HfO2 and ZrO2 Films Grown via Atomic Layer Deposition on Mo Electrodes
Yeon Woo Yoo et al.
ACS APPLIED MATERIALS & INTERFACES (2014)
Interface Engineering for High-Performance Top-Gated MoS2 Field-Effect Transistors
Xuming Zou et al.
ADVANCED MATERIALS (2014)
MoS2 functionalization for ultra-thin atomic layer deposited dielectrics
Angelica Azcatl et al.
APPLIED PHYSICS LETTERS (2014)
Atomic layer deposition of Y2O3 and yttrium-doped HfO2 using a newly synthesized Y(iPrCp)2(N-iPr-amd) precursor for a high permittivity gate dielectric
Jae-Seung Lee et al.
APPLIED SURFACE SCIENCE (2014)
Selective atomic layer deposition of zirconia on copper patterned silicon substrates using ethanol as oxygen source as well as copper reductant
Sathees Kannan Selvaraj et al.
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A (2014)
MoS2 Transistors Operating at Gigahertz Frequencies
Daria Krasnozhon et al.
NANO LETTERS (2014)
Charge Scattering and Mobility in Atomically Thin Semiconductors
Nan Ma et al.
PHYSICAL REVIEW X (2014)
Top and back gate molybdenum disulfide transistors coupled for logic and photo-inverter operation
Atiye Pezeshki et al.
JOURNAL OF MATERIALS CHEMISTRY C (2014)
High-Performance, Highly Bendable MoS2 Transistors with High-K Dielectrics for Flexible Low-Power Systems
Hsiao-Yu Chang et al.
ACS NANO (2013)
The effect of La2O3-incorporation in HfO2 dielectrics on Ge substrate by atomic layer deposition
Il-kwon Oh et al.
APPLIED SURFACE SCIENCE (2013)
CVD-derived Hf-based High-k Gate Dielectrics
Gang He et al.
CRITICAL REVIEWS IN SOLID STATE AND MATERIALS SCIENCES (2013)
High Performance Multilayer MoS2 Transistors with Scandium Contacts
Saptarshi Das et al.
NANO LETTERS (2013)
Electrochemical tuning of vertically aligned MoS2 nanofilms and its application in improving hydrogen evolution reaction
Haotian Wang et al.
PROCEEDINGS OF THE NATIONAL ACADEMY OF SCIENCES OF THE UNITED STATES OF AMERICA (2013)
Hysteresis in Single-Layer MoS2 Field Effect Transistors
Dattatray J. Late et al.
ACS NANO (2012)
The integration of high-k dielectric on two-dimensional crystals by atomic layer deposition
Han Liu et al.
APPLIED PHYSICS LETTERS (2012)
Theoretical approach to evaluating beryllium oxide as a gate dielectric considering electromagnetics and thermal stability
J. H. Yum et al.
APPLIED PHYSICS LETTERS (2012)
MoS2 Dual-Gate MOSFET With Atomic-Layer-Deposited Al2O3 as Top-Gate Dielectric
Han Liu et al.
IEEE ELECTRON DEVICE LETTERS (2012)
Light-enhanced surface passivation of TiO2-coated silicon
Andrew F. Thomson et al.
PROGRESS IN PHOTOVOLTAICS (2012)
Development of hafnium based high-k materials-A review
J. H. Choi et al.
MATERIALS SCIENCE & ENGINEERING R-REPORTS (2011)
Single-layer MoS2 transistors
B. Radisavljevic et al.
NATURE NANOTECHNOLOGY (2011)
Integrations and challenges of novel high-k gate stacks in advanced CMOS technology
Gang He et al.
PROGRESS IN MATERIALS SCIENCE (2011)
Applications of atomic layer deposition to nanofabrication and emerging nanodevices
Hyungjun Kim et al.
THIN SOLID FILMS (2009)
Structure and electrical properties of HfO2 high-k films prepared by pulsed laser deposition on Si (100)
Hao Wang et al.
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING (2008)
Pulsed laser deposition and characterization of Hf-based high-k dielectric thin films
Mehmet Alper Sahiner et al.
THIN SOLID FILMS (2007)
Electrical properties of high-κ gate dielectrics:: Challenges, current issues, and possible solutions
M. Houssa et al.
MATERIALS SCIENCE & ENGINEERING R-REPORTS (2006)
Experimental observation of the quantum Hall effect and Berry's phase in graphene
YB Zhang et al.
NATURE (2005)
Review on high-k dielectrics reliability issues
G Ribes et al.
IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY (2005)
Challenges for the characterization and integration of high-κ dielectrics
RM Wallace
APPLIED SURFACE SCIENCE (2004)
Negative bias temperature instability: Road to cross in deep submicron silicon semiconductor manufacturing
DK Schroder et al.
JOURNAL OF APPLIED PHYSICS (2003)
Effect of Al inclusion in HfO2 on the physical and electrical properties of the dielectrics
WJ Zhu et al.
IEEE ELECTRON DEVICE LETTERS (2002)
Atomic layer deposition of Al2O3 thin films using trimethylaluminum and isopropyl alcohol
WS Jeon et al.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY (2002)
Band structures and band offsets of high K dielectrics on Si
J Robertson
APPLIED SURFACE SCIENCE (2002)
Thermostability of amorphous zirconium aluminate high-k layers
C Zhao et al.
JOURNAL OF NON-CRYSTALLINE SOLIDS (2002)
Ultrathin (<4 nm) SiO2 and Si-O-N gate dielectric layers for silicon microelectronics:: Understanding the processing, structure, and physical and electrical limits
ML Green et al.
JOURNAL OF APPLIED PHYSICS (2001)
High-κ gate dielectrics:: Current status and materials properties considerations
GD Wilk et al.
JOURNAL OF APPLIED PHYSICS (2001)
Alternative dielectrics to silicon dioxide for memory and logic devices
AI Kingon et al.
NATURE (2000)