Related references
Note: Only part of the references are listed.Direct Visualization of Current-Stimulated Oxygen Migration in YBa2Cu3O7-δ Thin Films
Stefan Marinkovic et al.
ACS NANO (2020)
The role of oxygen vacancies in the high cycling endurance and quantum conductance in BiVO4-based resistive switching memory
Mengting Zhao et al.
INFOMAT (2020)
Subthreshold firing in Mott nanodevices
Javier del Valle et al.
NATURE (2019)
Quantized Conduction Device with 6-Bit Storage Based on Electrically Controllable Break Junctions
Writam Banerjee et al.
ADVANCED ELECTRONIC MATERIALS (2019)
Self-Assembled Networked PbS Distribution Quantum Dots for Resistive Switching and Artificial Synapse Performance Boost of Memristors
Xiaobing Yan et al.
ADVANCED MATERIALS (2019)
An electronic synapse memristor device with conductance linearity using quantized conduction for neuroinspired computing
Jianhui Zhao et al.
JOURNAL OF MATERIALS CHEMISTRY C (2019)
Improved Synapse Device With MLC and Conductance Linearity Using Quantized Conduction for Neuromorphic Systems
Seokjae Lim et al.
IEEE ELECTRON DEVICE LETTERS (2018)
Efficient and self-adaptive in-situ learning in multilayer memristor neural networks
Can Li et al.
NATURE COMMUNICATIONS (2018)
Isostructural metal-insulator transition in VO2
D. Lee et al.
SCIENCE (2018)
Biological plausibility and stochasticity in scalable VO2 active memristor neurons
Wei Yi et al.
NATURE COMMUNICATIONS (2018)
Self-limited single nanowire systems combining all-in-one memristive and neuromorphic functionalities
Gianluca Milano et al.
NATURE COMMUNICATIONS (2018)
Memristor with Ag-Cluster-Doped TiO2 Films as Artificial Synapse for Neuroinspired Computing
Xiaobing Yan et al.
ADVANCED FUNCTIONAL MATERIALS (2018)
On-Demand Reconfiguration of Nanomaterials: When Electronics Meets Ionics
Jihang Lee et al.
ADVANCED MATERIALS (2018)
Synaptic Suppression Triplet-STDP Learning Rule Realized in Second-Order Memristors
Rui Yang et al.
ADVANCED FUNCTIONAL MATERIALS (2018)
Memristors with diffusive dynamics as synaptic emulators for neuromorphic computing
Zhongrui Wang et al.
NATURE MATERIALS (2017)
Sharpened VO2 Phase Transition via Controlled Release of Epitaxial Strain
Daesu Lee et al.
NANO LETTERS (2017)
Controllable quantized conductance for multilevel data storage applications using conductive bridge random access memory
Fekadu Gochole Aga et al.
NANOTECHNOLOGY (2017)
Reducing the stochasticity of crystal nucleation to enable subnanosecond memory writing
Feng Rao et al.
SCIENCE (2017)
Giant tunnelling electroresistance in metal/ferroelectric/semiconductor tunnel junctions by engineering the Schottky barrier
Zhongnan Xi et al.
NATURE COMMUNICATIONS (2017)
A novel true random number generator based on a stochastic diffusive memristor
Hao Jiang et al.
NATURE COMMUNICATIONS (2017)
Face classification using electronic synapses
Peng Yao et al.
NATURE COMMUNICATIONS (2017)
A 1D Vanadium Dioxide Nanochannel Constructed via Electric-Field-Induced Ion Transport and its Superior Metal-Insulator Transition
Wuhong Xue et al.
ADVANCED MATERIALS (2017)
Ramp-Reversal Memory and Phase-Boundary Scarring in Transition Metal Oxides
Naor Vardi et al.
ADVANCED MATERIALS (2017)
Highly Reproducible and Regulated Conductance Quantization in a Polymer-Based Atomic Switch
Karthik Krishnan et al.
ADVANCED FUNCTIONAL MATERIALS (2017)
Joule Heating-Induced Metal-Insulator Transition in Epitaxial VO2/TiO2 Devices
Dasheng Li et al.
ACS APPLIED MATERIALS & INTERFACES (2016)
A 250 mV Cu/SiO2/W Memristor with Half-Integer Quantum Conductance States
S. R. Nandakumar et al.
NANO LETTERS (2016)
Reversible phase modulation and hydrogen storage in multivalent VO2 epitaxial thin films
Hyojin Yoon et al.
NATURE MATERIALS (2016)
Quantized conductance coincides with state instability and excess noise in tantalum oxide memristors
Wei Yi et al.
NATURE COMMUNICATIONS (2016)
Quantitative Mapping of Phase Coexistence in Mott-Peierls Insulator during Electronic and Thermally Driven Phase Transition
Himanshu Madan et al.
ACS NANO (2015)
Nonvolatile/volatile behaviors and quantized conductance observed in resistive switching memory based on amorphous carbon
Xiaoning Zhao et al.
CARBON (2015)
Oxygenated amorphous carbon for resistive memory applications
Claudia A. Santini et al.
NATURE COMMUNICATIONS (2015)
Highly Uniform, Electroforming-Free, and Self-Rectifying Resistive Memory in the Pt/Ta2O5/HfO2-x/TiN Structure
Jung Ho Yoon et al.
ADVANCED FUNCTIONAL MATERIALS (2014)
A Review of Three-Dimensional Resistive Switching Cross-Bar Array Memories from the Integration and Materials Property Points of View
Jun Yeong Seok et al.
ADVANCED FUNCTIONAL MATERIALS (2014)
Highly Controllable and Stable Quantized Conductance and Resistive Switching Mechanism in Single-Crystal TiO2 Resistive Memory on Silicon
Chengqing Hu et al.
NANO LETTERS (2014)
Resistive switching and its suppression in Pt/Nb:SrTiO3 junctions
Evgeny Mikheev et al.
NATURE COMMUNICATIONS (2014)
Memristive devices for computing
J. Joshua Yang et al.
NATURE NANOTECHNOLOGY (2013)
Suppression of Metal-Insulator Transition in VO2 by Electric Field-Induced Oxygen Vacancy Formation
Jaewoo Jeong et al.
SCIENCE (2013)
Atomic Switch: Atom/Ion Movement Controlled Devices for Beyond Von-Neumann Computers
Tsuyoshi Hasegawa et al.
ADVANCED MATERIALS (2012)
Observation of Conductance Quantization in Oxide-Based Resistive Switching Memory
Xiaojian Zhu et al.
ADVANCED MATERIALS (2012)
Electrical transport across Au/Nb:SrTiO3 Schottky interface with different Nb doping
K. G. Rana et al.
APPLIED PHYSICS LETTERS (2012)
Atomically controlled electrochemical nucleation at superionic solid electrolyte surfaces
Ilia Valov et al.
NATURE MATERIALS (2012)
Short-term plasticity and long-term potentiation mimicked in single inorganic synapses
Takeo Ohno et al.
NATURE MATERIALS (2011)
A size-dependent nanoscale metal-insulator transition in random materials
Albert B. K. Chen et al.
NATURE NANOTECHNOLOGY (2011)
Atomic structure of conducting nanofilaments in TiO2 resistive switching memory
Deok-Hwang Kwon et al.
NATURE NANOTECHNOLOGY (2010)
Diffusion in Polycrystalline Materials Grain Boundaries, Mathematical Models, and Experimental Data
Ralf Dohmen et al.
DIFFUSION IN MINERALS AND MELTS (2010)
Strain engineering and one-dimensional organization of metal-insulator domains in single-crystal vanadium dioxide beams
J. Cao et al.
NATURE NANOTECHNOLOGY (2009)
First-order reversal curve measurements of the metal-insulator transition in VO2: Signatures of persistent metallic domains
J-G. Ramirez et al.
PHYSICAL REVIEW B (2009)
Si/a-Si core/shell nanowires as nonvolatile crossbar switches
Yajie Dong et al.
NANO LETTERS (2008)
Multiple avalanches across the metal-insulator transition of vanadium oxide nanoscaled junctions
Amos Sharoni et al.
PHYSICAL REVIEW LETTERS (2008)
Mott transition in VO2 revealed by infrared spectroscopy and nano-imaging
M. M. Qazilbash et al.
SCIENCE (2007)
Temperature-dependent polarity reversal in Au/Nb:SrTiO3 Schottky junctions
T. Susaki et al.
PHYSICAL REVIEW B (2007)
Quantized conductance atomic switch
K Terabe et al.
NATURE (2005)
Atomistic modeling of point defects and diffusion in copper grain boundaries
A Suzuki et al.
INTERFACE SCIENCE (2003)
Share Paper
