4.5 Article

Nondestructive Direct Photolithography for Patterning Quantum Dot Films by Atomic Layer Deposition of ZnO

Journal

ADVANCED MATERIALS INTERFACES
Volume 9, Issue 22, Pages -

Publisher

WILEY
DOI: 10.1002/admi.202200835

Keywords

atomic layer deposition; InP quantum dot; patterning quantum dot films; photolithography; quantum dot-based light emitting diodes

Funding

  1. National Research Foundation of Korea (NRF) - Korea Government (MSIT) [NRF-2022R1A4A3018802, NRF-2021M3H4A3A01062964, NRF-2021R1F1A1047892]
  2. Korea Institute for Advanced of Technology (KIAT) - Korea Government (MOTIE) [P0008458]

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Colloidal quantum dot-based light-emitting diodes (QD-LEDs) are potential future self-emissive displays with large-scale solution processibility and high color purity. This study reports a non-destructive direct photolithography process for patterning QD films using a negative photoresist that does not affect the photoluminescence (PL) intensities of Cd- and InP-based QD films. Additionally, micropatterning of InP-based QD films using photolithography is demonstrated for the first time, and a QD electroluminescence device is successfully fabricated using this patterning method.
Colloidal quantum dot-based light-emitting diodes (QD-LEDs) are one of the potential future self-emissive displays owing to their large-scale solution-processibility and high color purity. For the industrial application of QD-LEDs, high-performance QD-LED and high-resolution patterning of quantum dot (QD) films are required. Photolithography is an ideal tool for patterning QD films. Previously, the high-resolution patterning of QD films using direct photolithography by ultra-thin atomic layer deposition of ZnO on the QD surface is reported. The patterning process is acceptable for Cd-based QD films, but the photoresist severely deteriorates the photoluminescence (PL) intensity of InP-based QD films owing to the presence of sulfonic groups in the photoactive compound. Herein, a non-destructive direct photolithography process for QD film patterning using a negative photoresist that does not affect the PL intensities of Cd- and InP-based QD films is reported. The effect of the photoresist is also verified by a PL lifetime study. Extremely bright Cd- and InP-based QD films are successfully patterned using a softer photoresist, and micropatterning of InP-based QD films is reported for the first time in this work using photolithography. A QD electroluminescence device is also successfully fabricated using the patterning method.

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