Journal
ADVANCED MATERIALS INTERFACES
Volume 9, Issue 25, Pages -Publisher
WILEY
DOI: 10.1002/admi.202201266
Keywords
chalcopyrite; interface recombination; photoelectrochemical water splitting; photovoltaic solar cells; thin-films
Funding
- JSPS [19H02822, 19K05282, 20H05120]
- Hirao Taro Foundation of KONAN GAKUEN for Academic Research
- New Energy and Industrial Technology Development Organization under the Ministry of Economy, Trade and Industry
- Kinoshita Memorial Foundation
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This article discusses the efficiency of solar cells and photocathodes using CGSe photoabsorber layers and highlights the importance of interface modification in controlling energy conversion device parameters.
Renewable energy sources, in particular, photovoltaic solar cells and hydrogen fuel, are expected to be the pillars of a sustainable society. Chalcopyrite CuGaSe2 (CGSe) has potential for using in such applications. This article presents efficient solar cells suitable as top cells for tandem devices and highly active photocathodes for solar hydrogen evolution using CGSe photoabsorber layers with modified p-n heterointerfaces. Rb-doping during the last stage of CGSe film growth effectively improves the photovoltaic performance, and solar cell efficiency of >10% with a high fill factor (FF) of 74.6% is obtained. The half-cell solar-to-hydrogen conversion efficiency reaches 8% with the use of a photocathode composed of a CGSe film grown in an identical growth batch. Interface modification with i) a Cu-deficient layer, ii) alkali-metal doping, and iii) an n-type buffer layer formed on the CGSe film surface is found to a be key to control the energy conversion device parameters, such as the FF and open circuit voltage of solar cells and the onset potential of photoelectrochemical cells, due to the suppression of interface recombination.
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