High performance quantum piezotronic tunneling transistor based on edge states of MoS2 nanoribbon

High performance edge states-based quantum piezotronic tunneling transistor with MoS2 nanoribbon device architecture at room temperature is demonstrated. The edge states are identified by the tight-binding band calculations. The Fermi energy position related to carrier concentration and tunneling probability are investigated based on quantum mechanics theory. It is found that the tunneling current can be exponentially controlled by piezotronic effect, and the Schottky barrier height can also be modified. The edge states transport behavior is further elucidated by conductance and electronic density distribution with applied strains. The strain sensitivity of the quantum piezotronic transistor can reach over 10(3). This study is capable of advancing the design of new generation of transistor devices based on edge states, and providing prospects of realizing high performance room temperature quantum piezotronic devices.

Automated summary

A high performance quantum piezotronic tunneling transistor based on edge states in MoS2 nanoribbon device architecture is demonstrated at room temperature. The study reveals that the tunneling current can be exponentially controlled by the piezotronic effect, and the Schottky barrier height can also be modified. The strain sensitivity of the quantum piezotronic transistor is found to be over 10^3. This research has significant implications for the design of new generation transistor devices and opens up possibilities for high performance quantum piezotronic devices at room temperature.