Journal
MICROMACHINES
Volume 13, Issue 7, Pages -Publisher
MDPI
DOI: 10.3390/mi13071101
Keywords
millimeter-wave; CMOS; power amplifier; specification degradation; temperature compensation
Categories
Funding
- State Key Laboratory of Complex Electromagnetic Environment Effects on Electronics and Information System [CEMEE2022G0201, CEMEE-002-20220224]
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This study presents a differential stacked millimeter-wave wideband power amplifier with a compensation circuit to reduce the fluctuation of gain with changing temperature.
Power amplifier (PA) specifications are closely related to changes in temperature; thus, the small-signal gain (S21) of PA decreases with the temperature increase. To compensate for the degradation caused by the decrease in S21, we present a compensation circuit that consists of two diodes and four resistors. At the same time, a differential stacked millimeter-wave wideband PA was designed and implemented based on this compensation circuit and 55 nm CMOS process. The post-layout simulation results showed that the fluctuation of S21 reduced from 2.4 dB to 0.1 dB in the frequency range of 25-40 GHz over the temperature range of -40 degrees C to 125 degrees C. Furthermore, the proposed on-chip temperature compensation circuit also applies to multi-stage cascaded microwave/mm-wave power amplifiers.
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