4.6 Article

Toward stable photoelectrochemical water splitting using NiOOH coated hierarchical nitrogen-doped ZnO-Si nanowires photoanodes

Journal

JOURNAL OF ENERGY CHEMISTRY
Volume 71, Issue -, Pages 45-55

Publisher

ELSEVIER
DOI: 10.1016/j.jechem.2022.03.015

Keywords

Hierarchical NWs; MOCVD; NiOOH cocatalyst; N-doping; Photoelectrochemical water splitting

Funding

  1. National Research Foundation of Korea (NRF) - Ministry of Education, Science, and Technology [2018R1A6A1A03024334, NRF-2019R1A2C1006360]
  2. Basic Science Research Capacity Enhancement Project through Korea Basic Science Institute (National Research Facilities and Equipment Center) - Ministry of Education [2019R1A6C1010024]

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This study presents strategic improvements in the PEC water splitting performance of ZnO nanowires by nitrogen doping and the core-shell deposition of a NiOOH cocatalyst. Nitrogen doping enhances visible light absorption and suppresses the recombination of photogenerated carriers. NiOOH-deposited N-doped ZnO nanowire photoanodes show significantly improved photostability and photocurrent density.
Photoelectrochemical (PEC) water splitting is regarded as the most promising method to generate green hydrogen , and zinc oxide (ZnO) has been identified as one of the promising candidates for PEC water splitting owing to its straddling band alignment with the water redox level. However, its PEC perfor-mance is limited due to its wide bandgap and anticipated by photocorrosion in an aqueous medium. In this work, we present strategic improvements in the PEC water splitting performance of ZnO nano-wires (NWs) by nitrogen (N)-doping along with photostability by the core-shell deposition of a NiOOH cocatalyst. Highly crystalline hierarchical ZnO NWs were fabricated on Si NWs (ZnO-Si HNWs) using a metal organic chemical vapor deposition approach. The NWs were then N-doped by annealing in an NH3 atmosphere. The N-doped ZnO-Si HNWs (N:ZnO-Si HNWs) showed enhanced visible light absorp-tion, and suppressed recombination of the photogenerated carriers. As compared to ZnO-Si HNWs (0.045 mA cm(-2) at 1.23 V vs RHE), the N:ZnO-Si HNWs (0.34 mA cm(-2) at 1.23 V vs RHE) annealed in NH3 ambient for 3 h at 600 degrees C showed 7.5-fold enhancement in the photocurrent density. NiOOH-deposited N:ZnO-Si HNW photoanodes with a photostability of 82.21% over 20000 s showed 10.69-fold higher photocurrent density (0.48 mA cm(-2) at 1.23 V vs RHE) than ZnO-Si HNWs. (C) 2022 Science Press and Dalian Institute of Chemical Physics, Chinese Academy of Sciences. Published by ELSEVIER B.V. and Science Press. All rights reserved.

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