The Influence of PVC and (PVC:SnS) Interfacial Polymer Layers on the Electric and Dielectric Properties of Au/n-Si Structure

To determine the impact of pure and (PVC:SnS) interlayers on the electrophysical features of Schottky barrier diodes (SBDs), Au/n-Si, Au/PVC/n-Si, and Au/(PVC: SnS)/n-Si structures are created on the same n-Si wafer. The average crystalline size, surface-morphology, purity-characterization, and optical features of the prepared SnS-nanostructure are studied by different common techniques. Basic electrical-parameters of these structures are calculated from the I-V data. The energy-dependent distribution of surface-states (N-ss) and the current-conduction-mechanisms (CCMs) in these diodes were extracted. The use of PVC and SnS-doped PVC interfacial polymer layers leads to improving the performance of SBDs by increasing the n, R-s, N-ss, I-0 and an increase in R-sh, Barrier Height (BH). The dielectric-constant (epsilon')/loss (epsilon ''), and ac electrical-conductivity sigma(ac) of them are investigated in wide-range frequency (100 Hz-1 MHz) by using capacitance/conductance-frequency (C/G-f) measurements and the origin of observed negative capacitance/dielectric at low-frequencies were discussed in details.

Automated summary

This study investigates the impact of PVC and SnS-doped PVC interfacial layers on the performance of Schottky barrier diodes (SBDs). The results show that these layers can improve the electrical features of the devices and a negative capacitance/dielectric phenomenon is observed at low frequencies.