Journal
JOURNAL OF ELECTRONIC MATERIALS
Volume 46, Issue 5, Pages 2705-2709Publisher
SPRINGER
DOI: 10.1007/s11664-016-4937-z
Keywords
Higher manganese silicides; solid solution; thermoelectric properties; chimney-ladder phase; vanadium substitution
Ask authors/readers for more resources
To further enhance the thermoelectric (TE) properties of higher manganese silicides (HMSs), dissipation of layered precipitates of MnSi phase as well as optimization of hole carrier concentration are critical. We have prepared a lightly vanadium-substituted solid solution of HMS, (Mn1-x V (x) )Si (gamma) , by a melt growth method. A 2% substitution of manganese with vanadium is found to dissipate MnSi precipitates effectively, resulting in a substantial increase in the electrical conductivity from 280 S/cm to 706 S/cm at 800 K. The resulting TE power factor reaches 2.4 mW/K-2-m at 800 K, more than twice that of the V-free sample. The total thermal conductivity did not change significantly with increasing x owing to a reduction of the lattice contribution. As a consequence, the dimensionless figure of merit zT of the melt-grown samples increased from 0.26 +/- 0.01 for x = 0 to 0.59 +/- 0.01 for x = 0.02 at around 800 K.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available