Journal
JOURNAL OF ELECTRONIC MATERIALS
Volume 45, Issue 11, Pages 5756-5763Publisher
SPRINGER
DOI: 10.1007/s11664-016-4819-4
Keywords
CdO; illumination effect; electrical parameters
Categories
Funding
- Scientific Research Projects Commission of Bingol University [BAP-38-201-2014]
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Cadmium oxide (CdO) thin films were synthesized by the sol-gel method. The films were analyzed by means of XRD, AFM, and UV/Vis spectrophotometry. X-ray diffraction patterns confirm that the films are formed from CdO with cubic crystal structure and consist of nano-particles. The energy gap of the prepared film was found to be 2.29 eV. The current-voltage (I-V) characteristics of the CdO/p-Si heterojunction were examined in the dark and under different illumination intensities. The heterojunction showed high rectifying behavior and a strong photoresponse. Main electrical parameters of the photodiode such as series and shunt resistances (R (s) and R (sh)), saturation current I (0,) and photocurrent I (ph), were extracted considering a single diode equivalent circuit of a photovoltaic cell. Results indicate that the application of CdO thin films as an electron transport layer on p-Si acts as a photodetector in the field of the UV/visible.
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