Journal
JOURNAL OF ELECTRONIC MATERIALS
Volume 46, Issue 1, Pages 432-438Publisher
SPRINGER
DOI: 10.1007/s11664-016-4869-7
Keywords
Semiconductors; solvothermal; defects; oxygen vacancies; luminescence
Categories
Funding
- National Natural Science Foundation Shandong Province, China [ER2012EMM007]
- Scientific and Technological Projects of Shandong Province of China [2014GGX102016]
- Project of Shandong Province Higher Educational Sciences and Technology Program of China [J15LA60]
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Oxygen vacancies in crystal have an important impact on the electronic properties of zinc oxide (ZnO). In this paper, ZnO nanorods with rich oxygen vacancies were prepared through a novel gas-assisted hydrothermal growth process. X-ray diffraction data showed that single-phase ZnO with the wurtzite crystal structure was obtained and the crystallite size decreased as the reaction atmosphere pressure increased. The oxygen vacancies of ZnO were confirmed using x-ray photoelectron spectroscopy and photoluminescence spectroscopy. The results showed that the concentration of oxygen vacancies could be regulated by both the atmosphere pressure and the atmosphere properties. The oxygen vacancies in ZnO samples were reduced when the pressure increase in the hydrogen reaction environment (reducing atmosphere) and the oxygen vacancies in ZnO samples were increased when the pressure increased in the oxygen reaction environment (oxidizing atmosphere).
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