Journal
JOURNAL OF ELECTRONIC MATERIALS
Volume 45, Issue 5, Pages 2601-2607Publisher
SPRINGER
DOI: 10.1007/s11664-016-4429-1
Keywords
Nanowires; thermal evaporation; photoluminescence; semiconductors
Categories
Funding
- National Foundation for Science and Technology Development of Vietnam (NAFOSTED) [104.03.2013.39]
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Vertically well-aligned ZnO nanowire (NW) arrays with high density have been successfully synthesized on sapphire substrate by thermal evaporation of the zinc powders without catalysts or additives. The ZnO NWs were characterized by scanning electron microscopy, transmission electronic microscopy (TEM), x-ray diffraction, ultraviolet-visible, photoluminescence, Raman, and x-ray photoelectron spectroscopy. The results showed that the obtained ZnO NWs had diameters in the range of 100-130 nm, lengths over several micrometers and well aligned in the direction perpendicular to the substrate surface. The as-synthesized ZnO NWs, which were single crystalline in a hexagonal structure, showed uniform morphology, faceted planes at the tips of the NWs, and grown along the [001] direction. The as-synthesized NW arrays had a good crystal quality with excellent optical properties, showing a sharp and strong ultraviolet emission at 380 nm and a weak visible emission at around 500 nm.
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