Local strain-dependent Zeeman splitting in GaN:Eu

The electronic spins of rare-earth materials are attractive candidates for spin qubits and quantum memories. To access individual spins, tuning of the g-factor is desirable. Here, we report on local strain-dependent g-factors of the D-5(0)-F-7(2) transitions of Eu3+ centers in GaN:Eu thin films. We have found a clear correlation between the effective g-factor and the emission energy shift induced by the local strain. The combination of micro-photoluminescence and scanning electron microscope/electron backscattering diffraction measurements has revealed that the compressive strain of 0.2%-0.4%, relative to a surrounding reference point, induces an energy shift of about 3 meV. The strain decreases the g-factor of the emission at 1.991 eV from 2.5 to 1.5, while the strain increases the g-factor of the emission at 1.994 eV from 1.1 to 1.7. The result suggests that the g-factor can be tuned by the local strain. On the basis of the strain-induced energy shift and the g-factor, we have identified the optical sites. The D-5(0)-F-7(2) transitions observed in this study consist of three optical sites with C-3v symmetry and one site with C-1h symmetry. (C) 2022 Author(s).

Automated summary

The study investigates the strain-dependent g-factors of Eu3+ centers in GaN: Eu thin films and finds a correlation between the effective g-factor and the emission energy shift induced by local strain. The research suggests that the g-factor can be tuned by local strain, providing a method to access individual spins.