Temperature dependent charge transport in ferroelectrically gated graphene far from the Dirac point

Charge transport in ferroelectric (FE) gated graphene far from the Dirac point (DP) was studied in the temperature range 300 K < T < 350 K. A non-monotonic/monotonic/non-monotonic behavior in the conductivity [s(T)] was observed as one moved away from the DP. As the gate polarization increased, additional impurity charges were compensated, which reduced charge scattering. The uncompensated charges doped graphene and s(T) switched to a monotonic increase with increasing T. However, far from the DP, the polarization reached saturation, which resulted in still lower impurity charge scattering. The carrier concentration increased, and a non-monotonic response in s(T) reappeared, which was attributed to phonon scattering. A theoretical model is presented that combined impurity charge and phonon scattering conduction mechanisms. The top gate polarizable FE provided a novel approach to investigate charge transport in graphene via controlled compensation of impurity charges, and in the process revealed non-monotonic behavior in s(T) not previously seen in SiO2 back gated graphene devices.

Automated summary

Charge transport in graphene far from the Dirac point under ferroelectric gating was studied. Non-monotonic/monotonic/non-monotonic behavior in conductivity was observed. The gate polarization compensated impurity charges and reduced charge scattering. The non-monotonic response in conductivity reappeared far from the Dirac point due to phonon scattering.