Electron transport properties of graphene quantum dots with non-centro-symmetric Gaussian deformation

A theoretical investigation on electron transport properties of rectangular graphene quantum dots (GQDs) with non-centro-symmetric out-of-plane Gaussian deformation of elliptic type is presented. Different levels of deformation are explored to estimate system geometry optimal for potential electronic applications. Electronic properties of deformed GQDs are studied in terms of local density of states (LDOS), band-gap opening and equilibrium ballistic conductance. In particular, it was observed that the symmetry of spatial LDOS structure is directly linked with the symmetry of properly defined local strain field (LSF) map, for a wide energy range. The relationship confirms qualitatively predictions obtained on the basis of the concept of a pseudomagnetic field, used in continuum models of graphene, including strain induced effects. The conductance spectra of deformed GQD as a device connected to semi-infinite graphene armchair nanoribbons as reservoirs are studied in a frame of tight-binding (TB) model in combination with non-equilibrium Green's-functions technique (NEGF).

Automated summary

This theoretical investigation focuses on the electron transport properties of rectangular graphene quantum dots (GQDs) with non-centro-symmetric out-of-plane Gaussian deformation of elliptic type. Different levels of deformation are explored to determine the optimal geometry for potential electronic applications. The electronic properties of deformed GQDs are analyzed in terms of local density of states (LDOS), band-gap opening, and equilibrium ballistic conductance. The relationship between the symmetry of the LDOS structure and the properly defined local strain field (LSF) map is studied and confirms predictions made using the concept of a pseudomagnetic field in continuum models of graphene.