4.6 Article

Silicon oxynitride platform for linear and nonlinear photonics at NIR wavelengths

Journal

OPTICAL MATERIALS EXPRESS
Volume 12, Issue 9, Pages 3551-3562

Publisher

Optica Publishing Group
DOI: 10.1364/OME.463940

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Funding

  1. European Commission [777222, 899368]

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Researchers have proposed a low-loss material platform based on silicon oxynitride (SiON), which exhibits significant linear and nonlinear optical characteristics in the infrared and near-infrared wavelength range. The platform demonstrates low propagation loss at visible wavelengths, enabling the realization of long and complex photon manipulation circuits and high-quality factor resonators. Additionally, the proposed SiON exhibits a high nonlinear refractive index, enhancing the efficiency of on-chip photon generation schemes.
The development of versatile and novel material platforms for integrated photonics is of prime importance in the perspective of future applications of photonic integrated circuits for quantum information and sensing. Here we present a low-loss material platform based on high-refractive index silicon oxynitride (SiON), which offers significant characteristics for linear and non-linear optics applications in a wide range of red/near-infrared wavelengths. The demonstrated propagation loss < 1.5 dB/cm for visible wavelengths enables the realization of long and intricate circuitry for photon manipulations, as well as the realization of high quality factor resonators. In addition, the proposed SiON shows a high nonlinear index of 10-19 m(2)/W, improving the strength of nonlinear effects exploitable for on-chip photon generation schemes. (C) 2022 Optica Publishing Group under the terms of the Optica Open Access Publishing Agreement

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