Journal
MATERIALS
Volume 15, Issue 12, Pages -Publisher
MDPI
DOI: 10.3390/ma15124115
Keywords
thermoelectrics; tetrahedrites; SPS sintering; void filling; electronic structure calculations
Categories
Funding
- program Excellence initiative-research university for the AGH University of Science and Technology
- National Science Center (NCN) [2016/21/B/ST8/00409]
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This study attempted to achieve n-type conductivity in tetrahedrites by doping with magnesium. The experimental results showed that Mg doping reduces the concentration of holes, but sufficient magnesium doping to achieve n-type conductivity was not successful.
Tetrahedrites, due to their promising thermoelectric properties, are one of the materials being investigated for use in thermoelectric generators. One problem is the lack of n-type tetrahedrites, which would be beneficial for the design of tetrahedrite thermoelectric modules. Preliminary theoretical studies have shown that elements from groups I and II can be introduced into the structural voids of tetrahedrite, acting as donor dopants, and should enable n-type conductivity. Therefore, in this work, an attempt was made to obtain and study magnesium-doped tetrahedrites. A series of samples, MgxCu12Sb4S13, with different magnesium contents were obtained and their phase and chemical compositions were characterized. It was observed that the structural changes occurring upon doping indicate that Mg atoms are likely to be embedded in the structural voids. The experimental studies have been supported by electronic structure calculations indicating that the most likely location of Mg is in the structural voids at the 6b Wyckoff position. Seebeck coefficient and resistivity measurements showed that doping with Mg reduces the concentration of holes, which is consistent with the predicted donor character of the dopant. However, the introduction of magnesium in sufficient amounts to achieve n-type conductivity was not successful.
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