Journal
ADVANCED ENERGY MATERIALS
Volume 12, Issue 35, Pages -Publisher
WILEY-V C H VERLAG GMBH
DOI: 10.1002/aenm.202201676
Keywords
charge carrier extraction; interface engineering; nonradiative recombination; PbS quantum-dot solar cells
Categories
Funding
- National Key R&D Program of China [2018YFE0208500]
- New energy and industrial technology development organization (NEDO) [nedo p20015]
- Japan Science and Technology Agency (JST) Mirai program [JPMJMI17EA]
- JSPS MEXT KAKENHI [26286013, 17H02736]
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Lead sulfide colloidal quantum dot solar cells face challenges of non-radiative recombination and electron-hole extraction imbalance due to defects in the three interfaces. Coordinated control and passivation of these interfaces in PbS CQDSCs can improve charge transport, carrier extraction balance, and reduce non-radiative recombination.
Lead sulfide colloidal quantum dot solar cells (CQDSCs), the next generation of photovoltaics, are hampered by non-radiative recombination induced by defects and an electron-hole extraction imbalance. CQDSCs have three interfaces: CQD/CQD, electron transport layer (ETL)/CQD, and CQD/hole transport layer (HTL), and modifying one of these interfaces does not fix the problem stated above. Here, coordinated control and passivation of the three interfaces in PbS CQDSCs are presented and it is shown that the synergistic effects may improve charge transport and charge carrier extraction balance and minimize non-radiative recombination simultaneously. A facile method is developed for epitaxially growing an ultrathin perovskite shell on the CQD surface to passivate the CQD/CQD interface, resulting in CQD absorber layers with long carrier diffusion lengths. With the introduction of organic films with adjustable electrical characteristics, the influence of ETL/CQD interfacial modifications on carrier transport and recombination is investigated. An excessive increase in the electron extraction rate reduces the fill factor and solar efficiency, as discovered. Therefore a modified layer is created at the CQD/HTL interface to promote hole extraction, which enhances charge extraction balance and passivates the interface. Finally, PbS CQDSCs exhibit a power conversion efficiency of 15.45%, a record for Pb chalcogenide CQDSCs.
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