4.5 Article

Switchable Wavefront of Mid-Infrared Wave Using GeSbTe Metasurfaces

Journal

IEEE PHOTONICS JOURNAL
Volume 14, Issue 4, Pages -

Publisher

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JPHOT.2022.3185760

Keywords

Germanium; Metasurfaces; Reflection; Optical switches; Generators; Mirrors; Electromagnetics; GeSbTe; metasurface; anomalous reflection; orbital angular momentum; Lens

Funding

  1. National Natural Science Foundation of China [11974294]
  2. Guangdong Basic and Applied Basic Research Foundation [2020A1515010375]

Ask authors/readers for more resources

Based on the phase change material germanium antimony telluride, reflective metasurfaces are constructed using the Pancharatnam-Berry phase, allowing for manipulation of the reflection mode of terahertz waves. Three examples including a gradient metasurface, vortex beam generator, and focusing lens were demonstrated to showcase the functionality of these metasurfaces.
Benefiting from the unprecedented superiority of phase change material on manipulating electromagnetic wave, germanium antimony telluride-based optical devices attract a lot of attention. Here, based on Pancharatnam-Berry phase, reflective metasurfaces are presented by using phase change material-germanium antimony telluride (Ge3Sb2Te6). They can manipulate reflection mode of terahertz wave and realize some functions. In order to verify this, three examples are numerically demonstrated, and they are gradient metasurface, vortex beam generator, and focusing lens. First of all, Ge3Sb2Te6 blocks are used to construct reflective wavefront of gradient metasurface, and then realize switching between anomalous reflection and mirror reflection. Secondly, vortex beam generators are designed with |l| = 1 and |l| = 2, and mode number of orbital angular momentum is reconstructed through the switching of Ge3Sb2Te6 between crystalline state and amorphous state. Finally, a reflective lens is presented, whose focus appears or disappears under different circular polarizations. By adjusting phase state of Ge3Sb2Te6, dynamic adjustment of focusing intensity is realized. Our design may have potential applications in the fields of terahertz switching and communication.

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