Enhanced resistive switching characteristics of FeMnO3 resistive random access devices with Au

Au nanoparticles (Au NPs) embedded FMO (Au-FMO) thin films were fabricated on Pt/Ti/SiO2/Si substrates by using a chemical solution deposition method. The sandwich structured Pt/Au-FMO/Pt devices exhibit bipolar resistive switching behavior with uniform Set/Reset voltage distribution, stable high and low resistance values, and excellent retention characteristics. The introduction of Au NPs can enhance the local electric field, which greatly reduces the randomness of the generation and fracture of oxygen vacancy conductive filaments. The conduction mechanisms of Pt/Au-FMO/Pt devices in low resistance state and high resistance state can be described by Ohmic conduction and space charge limited current model, respectively. The results show that the Au-FMO films have great potential in the field of resistive random access memory devices.

Automated summary

Au nanoparticles embedded FMO thin films were successfully fabricated and applied in Pt/Au-FMO/Pt devices, which exhibited bipolar resistive switching behavior with stable performance and excellent retention characteristics. The introduction of Au nanoparticles enhanced the local electric field, reducing the randomness of oxygen vacancy conductive filaments. The results suggest that Au-FMO films have potential in resistive random access memory devices.