Study of deposition parameters of reactive-sputtered Si3N4 thin films by optical emission spectroscopy

Deposition parameters of silicon nitride in reactive direct-current magnetron sputtering were studied in two different chambers in order to establish a characterization protocol assisted by optical emission spectroscopy. Different discharge powers, working pressures and gas proportions (N-2:Ar) were used to create characterization curves to identify the optimum conditions for the synthesis of silicon nitride. These curves were used to observe changes in the plasma via emission lines and the supplied electrical parameters (voltage and current). Individual thin films were synthesized using different deposition parameters selected from the previous characterization curves, and their optical properties were characterized via spectroscopic ellipsometry. A correlation between deposition parameters, optical properties, and plasma emission lines was established to optimize silicon nitride deposition.

Automated summary

The deposition parameters of silicon nitride in reactive direct-current magnetron sputtering were studied to optimize the synthesis process. The characterization protocol included optical emission spectroscopy to observe changes in plasma and spectroscopic ellipsometry for optical property measurement.