Low-power alternating-current electroluminescence from Ga2O3:Tb3+/ SiOx-based metal-oxide-silicon structure by rapid thermal annealing method and solution-based technique

Alternating-current (AC) metal-oxide-semiconductor electroluminescence (MOS-EL) device with Ga2O3:Tb3+/ SiOx oxide layers on a silicon (Si) substrate has been demonstrated by a solution-based spin-coating technique followed with rapid thermal annealing (RTA) process. The oxide films were optimized in the Tb3+ concentration of 0.5 at.% and RTA temperature of 900 celcius, which revealed that the monoclinic beta-Ga2O3 with a thickness of 85 nm was formed on the Si substrate accompanied by the amorphous SiOx layer with a thickness of 8 nm. The MOS-EL device started to operate at 6 V (corresponding to 0.63x10(6) V/cm in an electric field) under the sinusoidal waveform of 400 Hz with green emission attributed to the f-f transitions of Tb3+ ions. The EL behavior revealed asymmetric optical and electrical characteristics due to the asymmetrical double oxide structure and short-term reliability with optical maintenance of 80% for 60 min without any encapsulation.

Automated summary

An alternating-current metal-oxide-semiconductor electroluminescence (MOS-EL) device with Ga2O3:Tb3+/ SiOx oxide layers on a silicon substrate was successfully fabricated using a solution-based spin-coating technique and rapid thermal annealing process. The device exhibited asymmetric optical and electrical characteristics due to its double oxide structure, and showed promising short-term reliability with 80% optical maintenance for 60 minutes without encapsulation.