Low-temperature growth of In2O3 films on a-plane sapphire substrates by pulsed laser deposition

High-quality body-centered cubic In2O3 films were grown on a-plane sapphire substrates at a temperature range of 100-600 ? by pulsed laser deposition. The structure, optical, and electrical properties were studied by X-ray diffraction, Raman spectroscopy, spectrophotometer, and Hall effect. The obtained In2O3 films have a bcc structure, a high carrier concentration range of 1 x 1019-9 x 10(20) cm(-3), a mobility range of 8 to 30 cm2V- 1s- 1, and a wide bandgap of 3.7-3.9 eV. The change of substrate temperature affects the crystalline quality, transmittance, carrier concentration, mobility, and bandgap value of In2O3 films. We believe that the low-temperature growth of high-quality In2O3 films can make In2O3 more widely used in various semiconductors devices.

Automated summary

High-quality body-centered cubic In2O3 films were grown on a-plane sapphire substrates using pulsed laser deposition. The films exhibited a good crystalline quality, high carrier concentration, and a wide bandgap. The properties of the films were affected by the substrate temperature.