Domain epitaxial growth of Ta3N5 film on c-plane sapphire substrate

Tritantalum pentanitride (Ta3N5) semiconductor is a promising material for photoelectrolysis of water with high efficiency. Ta3N5 is a metastable phase in the complex system of Ta-N binary compounds. Growing stabilized single-crystal Ta3N5 films is correspondingly challenging. Here, we demonstrate the growth of a nearly singlecrystal Ta3N5 film with epitaxial domains on c-plane sapphire substrate, Al2O3(0001), by magnetron sputter epitaxy. Introduction of a small amount -2% of O2 into the reactive sputtering gas mixed with N2 and Ar facilitates the formation of a Ta3N5 phase in the film dominated by metallic TaN. In addition, we indicate that a single-phase polycrystalline Ta3N5 film can be obtained with the assistance of a Ta2O5 seed layer. With controlling thickness of the seed layer smaller than 10 nm and annealing at 1000 degrees C, a crystalline beta phase Ta2O5 was formed, which promotes the domain epitaxial growth of Ta3N5 films on Al2O3(0001). The mechanism behind the stabilization of the orthorhombic Ta3N5 structure resides in its stacking with the ultrathin seed layer of orthorhombic beta-Ta2O5, which is energetically beneficial and reduces the lattice mismatch with the substrate.

Automated summary

We have successfully grown high-quality Ta3N5 films on sapphire substrates using magnetron sputter epitaxy. The addition of oxygen gas and a Ta2O5 seed layer promotes the formation of single-phase polycrystalline Ta3N5 films.