Journal
JOURNAL OF DISPLAY TECHNOLOGY
Volume 12, Issue 1, Pages 77-81Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JDT.2015.2456641
Keywords
biometrics; carrier injection; CMOS light-emitting device (LED); E-field confinement; fingerprint recognition system; photodiode; wedge shape
Funding
- Basic Science Research Program through the National Research Foundation of Korea (NRF) - Ministry of Science, ICT & Future Planning [NRF-2015R1C1A1A02036348]
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A new fully integrated CMOS optical-type fingerprint recognition system with silicon light-emitting devices (LEDs) and photodiodes is proposed. A three-terminal n+-p-n+ silicon CMOS LED is designed and implemented as a key block to replace the bulky optical light source and to realize a slim and integrated fingerprint sensor. The proposed LED employs injection-enhanced silicon in an avalanche mode, where E-field confinement with a wedge shape at a reverse biased p-n+ junction and hot-carrier injection from the adjacent forward biased p-n+ junction are applied to increase the quantum conversion efficiency of the LED. The developed LED was fabricated in a 0.18 mu m CMOS process. It emits 1.27 nW at a 600 nm wavelength consuming 2 mA at a 0.5 V reverse biased voltage and 2 V forward biased voltage. It provides an electrical-to-optical power conversion efficiency of 1.27 x 10(-6).
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