Journal
SOLID-STATE ELECTRONICS
Volume 194, Issue -, Pages -Publisher
PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/j.sse.2022.108355
Keywords
FD-SOI CMOS; Silicon quantum dots; Quantum computation; 3D TCAD simulation; Cryogenic temperatures
Funding
- French program Conventions Industrielles de Formation par la Recherche (CIFRE)
- Canada First Research Excellence Fund (CFREF)
- Natural Sciences and Engineering Research Council of Canada (NSERC)
- Ministere de l'Economie et de l'Innovation du Quebec
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The low-temperature behavior of an FD-SOI quantum dot device fabricated with standard manufacturing techniques was studied, with simulation and analysis conducted using QTCAD software, and the results compared with experimental data.
Reliable operation of nanoscale CMOS quantum dot devices at cryogenic temperatures fabricated with standard manufacturing techniques is of great importance for quantum computing applications. We investigated the very low temperature behavior of an Ultra Thin Body and Buried oxide (UTBB) Fully Depleted Silicon-On-Insulator (FD-SOI) quantum dot device fabricated using the standard fabrication process of STMicroelectronics. The performance of the quantum dot device is simulated and analyzed using the 3D Quantum Technology Computer Aided Design (QTCAD) software recently developed by Nanoacademic Technologies, achieving convergence down to 1.4 K. In this paper we present preliminary simulation results and compare them with experimental data collected from the measurements on a device with the same geometry.
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