4.6 Article

A High-Detection-Efficiency Optoelectronic Device for Trace Cadmium Detection

Journal

SENSORS
Volume 22, Issue 15, Pages -

Publisher

MDPI
DOI: 10.3390/s22155630

Keywords

cadmium; spectral measurement; photodetector

Funding

  1. National Natural Science Foundation of Hunan Province [2022JJ50063]
  2. Social and Science Fund of Hunan Province [18JD26]

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Cadmium (Cd) pollution poses a serious threat to food security and human health, and the current soil heavy metal detection methods have accuracy limitations. This study proposes a high-detection-efficiency photodiode that can improve the accuracy of the analyzer and meet the detection requirements for Cd.
Cadmium (Cd) pollution in soil is a serious threat to food security and human health, while, currently, the most widely used detection methods cannot accurately reflect the content of heavy metals in soil. Soil heavy metal detection combined with microelectronic sensors has become an important means of environmental heavy metal pollution prevention and control. X-ray Fluorescence spectrometry (XRF) can capture the excitation spectrum of metal elements, which is often used to detect Cd (II). However, due to the lack of high-performance optoelectronic devices, the analysis accuracy of the system cannot meet the requirements. Therefore, this study proposes a high-detection-efficiency photodiode (HDEPD) which can effectively improve the detection accuracy of the analyzer. The HDEPD is manufactured based on a 0.18 mu m standard complementary metal-oxide-semiconductor (CMOS) process. The volt-ampere curve, spectral response and noise characteristics of the device are obtained by constructing a test circuit combined with a spectral detection system. The test results show that the threshold voltage of HDEPD is 12.15 V. When the excess bias voltage increases from 1 V to 3 V, the spectral response peak of the device appears at 500 nm, and the photon detection probability (PDP) increases from 41.7% to 52.8%. The dark count rate (DCR) is 31.9 Hz/mu m(2) at a 3 V excess bias voltage. Since the excitation spectrum peak of Cd (II) is between 500 nm and 600 nm, the wavelength response range of HDEPD fully meets the detection requirements of Cd (II).

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