Related references
Note: Only part of the references are listed.Rectification behavior of polarization effect induced type-II n-GaN/n-type β-Ga2O3 isotype heterojunction grown by metal organic vapor phase epitaxy
Weijiang Li et al.
JOURNAL OF APPLIED PHYSICS (2020)
Epitaxial growth of GaN/Ga2O3 and Ga2O3/GaN heterostructures for novel high electron mobility transistors
Stefano Leone et al.
JOURNAL OF CRYSTAL GROWTH (2020)
Highly tunable, polarization-engineered two-dimensional electron gas in e-AlGaO3/e-Ga2O3 heterostructures
Praneeth Ranga et al.
APPLIED PHYSICS EXPRESS (2020)
Metal-Semiconductor-Metal ε-Ga2O3 Solar-Blind Photodetectors with a Record-High Responsivity Rejection Ratio and Their Gain Mechanism
Yuan Qin et al.
ACS PHOTONICS (2020)
Recent progress on the electronic structure, defect, and doping properties of Ga2O3
Jiaye Zhang et al.
APL MATERIALS (2020)
Investigation of β-Ga2O3 films and β-Ga2O3/GaN heterostructures grown by metal organic chemical vapor deposition
YaChao Zhang et al.
SCIENCE CHINA-PHYSICS MECHANICS & ASTRONOMY (2020)
Tin-assisted heteroepitaxial PLD-growth of κ-Ga2O3 thin films with high crystalline quality
M. Kneiss et al.
APL MATERIALS (2019)
Structural, optical, and electrical properties of orthorhombic κ-(InxGa1-x)2O3 thin films
A. Hassa et al.
APL MATERIALS (2019)
Surface/structural characteristics and band alignments of thin Ga2O3 films grown on sapphire by pulse laser deposition
Hong Yang et al.
APPLIED SURFACE SCIENCE (2019)
Energy-band alignments at ZnO/Ga2O3 and Ta2O5/Ga2O3 heterointerfaces by X-ray photoelectron spectroscopy and electron affinity rule
Zeng Liu et al.
JOURNAL OF APPLIED PHYSICS (2019)
High-Performance Metal-Organic Chemical Vapor Deposition Grown ε-Ga2O3 Solar-Blind Photodeterctor With Asymmetric Schottky Electrodes
Yuan Qin et al.
IEEE ELECTRON DEVICE LETTERS (2019)
Band alignment and band bending at α-Ga2O3/ZnO n-n isotype hetero-interface
X. H. Chen et al.
APPLIED PHYSICS LETTERS (2019)
Epitaxial κ-(AlxGa1-x)2O3 thin films and heterostructures grown by tin-assisted VCCS-PLD
P. Storm et al.
APL MATERIALS (2019)
Heteroepitaxial growth of α-, β-, γ- and κ-Ga2O3 phases by metalorganic vapor phase epitaxy
Volker Gottschalch et al.
JOURNAL OF CRYSTAL GROWTH (2019)
Electronic Properties of Ga2O3 Polymorphs
John L. Lyons
ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY (2019)
Valence band edge tail states and band gap defect levels of GaN bulk and InxGa1-xN films detected by hard X-ray photoemission and photothermal deflection spectroscopy
Masatomo Sumiya et al.
APPLIED PHYSICS EXPRESS (2018)
First-principle calculations of electronic structures and polar properties of (κ,ε)-Ga2O3
Juyeong Kim et al.
APPLIED PHYSICS EXPRESS (2018)
Heteroepitaxial growth of ε-(Al&ITx&ITGa1-&ITx&IT)2O3 alloy films on &ITc&IT-plane AlN templates by mist chemical vapor deposition
Daisuke Tahara et al.
APPLIED PHYSICS LETTERS (2018)
Growth Pressure Controlled Nucleation Epitaxy of Pure Phase epsilon- and beta-Ga2O3 Films on Al2O3 via Metal-Organic Chemical Vapor Deposition
Yuanpeng Chen et al.
CRYSTAL GROWTH & DESIGN (2018)
epsilon-Ga2O3 epilayers as a material for solar-blind UV photodetectors
M. Pavesi et al.
MATERIALS CHEMISTRY AND PHYSICS (2018)
First-principles study of crystal structure, elastic stiffness constants, piezoelectric constants, and spontaneous polarization of orthorhombic Pna2(1)-M2O3 (M = Al, Ga, In, Sc, Y)
Kazuhiro Shimada
MATERIALS RESEARCH EXPRESS (2018)
Use of mist chemical vapor deposition to impart ferroelectric properties to ε-Ga2O3 thin films on SnO2/c-sapphire substrates
Daisuke Tahara et al.
MATERIALS LETTERS (2018)
Microstructures and rotational domains in orthorhombic ε-Ga2O3 thin films
Hiroyuki Nishinaka et al.
JAPANESE JOURNAL OF APPLIED PHYSICS (2018)
Energy band offsets of dielectrics on InGaZnO4
David C. Hays et al.
APPLIED PHYSICS REVIEWS (2017)
β-Ga2O3 versus ε-Ga2O3: Control of the crystal phase composition of gallium oxide thin film prepared by metal-organic chemical vapor deposition
Yi Zhuo et al.
APPLIED SURFACE SCIENCE (2017)
Conduction and valence band offsets of LaAl2O3 with (-201) β-Ga2O3
Patrick H. Carey et al.
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B (2017)
Crystal Structure and Ferroelectric Properties of ε-Ga2O3 Films Grown on (0001)-Sapphire
Francesco Mezzadri et al.
INORGANIC CHEMISTRY (2016)
Surface properties of annealed semiconducting β-Ga2O3 (100) single crystals for epitaxy
A. Navarro-Quezada et al.
APPLIED SURFACE SCIENCE (2015)
Near valence-band electronic properties of semiconducting β-Ga2O3 (100) single crystals
A. Navarro-Quezada et al.
PHYSICAL REVIEW B (2015)
Epitaxial growth of phase-pure ε-Ga2O3 by halide vapor phase epitaxy
Yuichi Oshima et al.
JOURNAL OF APPLIED PHYSICS (2015)
Structures of Uncharacterised Polymorphs of Gallium Oxide from Total Neutron Diffraction
Helen Y. Playford et al.
CHEMISTRY-A EUROPEAN JOURNAL (2013)
Band bending and surface defects in β-Ga2O3
T. C. Lovejoy et al.
APPLIED PHYSICS LETTERS (2012)
Structures and energetics of Ga2O3 polymorphs
S. Yoshioka et al.
JOURNAL OF PHYSICS-CONDENSED MATTER (2007)
Share Paper
