4.7 Article

UV-induced degradation of high-efficiency silicon PV modules with different cell architectures

Journal

PROGRESS IN PHOTOVOLTAICS
Volume 31, Issue 1, Pages 36-51

Publisher

WILEY
DOI: 10.1002/pip.3606

Keywords

bifacial; crystalline silicon; recombination; surface passivation; UV-induced degradation

Ask authors/readers for more resources

Degradation from ultraviolet radiation has become prevalent in the front of solar cells due to the use of UV-transmitting encapsulants. This study examines UV-induced degradation in various commercial crystalline silicon cell technologies and finds that modern cell architectures are more vulnerable to UV damage, leading to a significant decrease in power. Bifacial cells with rear-side exposure show a greater power decrease, indicating that the rear side is more susceptible to UV damage.
Degradation from ultraviolet (UV) radiation has become prevalent in the front of solar cells due to the introduction of UV-transmitting encapsulants in photovoltaic (PV) module construction. Here, we examine UV-induced degradation (UVID) in various commercial, unencapsulated crystalline silicon cell technologies, including bifacial silicon heterojunction (HJ), interdigitated back contact (IBC), passivated emitter and rear contact (PERC), and passivated emitter rear totally diffused (PERT) solar cells. We performed UV exposure tests using UVA-340 fluorescent lamps at 1.24 W.m (at 340 nm) and 45 degrees C through 4.02 MJ.m(-2) (2000 h). Our results showed that modern cell architectures are more vulnerable to UVID, leading to a significant power decrease (-3.6% on average; 11.8% maximum) compared with the conventional aluminum back surface field (Al-BSF) cells (< 1% on average). The power degradation is largely caused by the decrease in short-circuit current and open-circuit voltage. A greater power decrease is observed in bifacial cells with rear-side exposure compared with those with front-side exposure, indicating that the rear side is more susceptible to UV damage. Secondary ion mass spectroscopy (SIMS) confirmed an increase in hydrogen concentration near the Si/passivation interface in Hi and IBC cells after UV exposure; the excess of hydrogen could result in hydrogen-induced degradation and subsequently cause higher recombination losses. Additionally, surface oxidation and hot-carrier damage were identified in PERT cells. Using a spectral-based analysis, we obtained an acceleration factor of 5x between unpackaged cells (containing a silicon nitride antireflective coating on the front) in the UV test and an encapsulated module (with the front glass and encapsulant blocking 90% of the UV at 294 nm and 353 nm, respectively) in outdoor conditions. From the analytical calculations, we show that a UV-blocking encapsulant can reduce UV transmission in the module by an additional factor of similar to 50.

Authors

I am an author on this paper
Click your name to claim this paper and add it to your profile.

Reviews

Primary Rating

4.7
Not enough ratings

Secondary Ratings

Novelty
-
Significance
-
Scientific rigor
-
Rate this paper

Recommended

No Data Available
No Data Available