Journal
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
Volume 219, Issue 22, Pages -Publisher
WILEY-V C H VERLAG GMBH
DOI: 10.1002/pssa.202200311
Keywords
bilayers; high mobility; indium gallium zinc oxide (IGZO); low voltages; solution processed; thin-film transistors (TFTs)
Funding
- National Natural Science Foundation of China [51702055, 62073084, 11904056, 11704079]
- National Taipei University of Technology, Shenzhen University Joint Research Program [NTUT-SZU-109-05]
- Basic and Applied Basic Research Fund of Guangdong [502220023]
- Open Foundation of Guangdong Provincial Key Laboratory of Electronic Functional Materials and Devices [EFMD2021008M]
- Special Funds for the Cultivation of Guangdong College Students' Scientific and Technological Innovation [pdjh2020a0174, pdjh2019a0147]
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This study investigates solution-processed indium gallium zinc oxide (IGZO) thin-film transistors (TFTs) with a bilayer structure by embedding an ultrathin layer of indium zinc oxide (IZO) between the gate dielectric and IGZO film. The optimized IGZO/IZO bilayer TFTs exhibit a high field-effect mobility and improved bias-stress stability compared to single-layer IGZO devices. In addition, the temperature-dependent mobility and V-T characteristics are studied to understand the trap distribution in the bilayer IGZO/IZO and single-layer IGZO TFTs. Moreover, low-voltage bilayer TFTs with high mobility are demonstrated.
Herein, solution-processed indium gallium zinc oxide (IGZO) thin-film transistors (TFTs) with a bilayer structure are investigated by embedding an ultrathin layer of indium zinc oxide (IZO) between the gate dielectric and IGZO film. The optimized IGZO/IZO bilayer TFTs exhibit a high field-effect mobility (mu(FE)) of 8.3 cm(2 ) V-1 s(-1), and the bias-stress stability of the bilayer TFTs is greatly improved compared with that of the single-layer IGZO devices. In addition, temperature-dependent mobility and V-T are investigated to reveal the trap distribution in the bilayer IGZO/IZO and single-layer IGZO TFTs. Moreover, low-voltage bilayer TFTs with a high mobility of 10.4 cm(2 ) V-1 s(-1) are demonstrated.
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