Journal
PHYSICA SCRIPTA
Volume 97, Issue 7, Pages -Publisher
IOP Publishing Ltd
DOI: 10.1088/1402-4896/ac7756
Keywords
SnS; chemical bath deposition; structural properties; optical properties; hall effect
Categories
Funding
- Research Fund of Mersin University in Turkey [2019-3-TP2-3751]
Ask authors/readers for more resources
Tin sulfide thin films were prepared using chemical bath deposition and their properties were investigated after annealing. The annealing process affected the film's optical, structural, and electrical properties. The p-type SnS films can be used as an alternative material for the absorber layer in p-n heterojunction solar cells.
Tin sulfide (SnS) thin films were produced on glass substrates at 65 degrees C by chemical bath deposition (CBD). Two of the obtained five identical films were annealed in an air atmosphere while the other two were annealed in a nitrogen atmosphere at different temperatures. The effects of annealing (at 150 degrees C and 250 degrees C in air and nitrogen atmospheres) on the optical, structural, and electrical properties of the films were investigated by UV-visible spectrophotometer, x-ray diffraction (XRD), Raman spectroscopy, scanning electron microscopy (SEM), and Hall-effect measurement. The energy band gap of as-deposited SnS thin film was determined to be 1.16 eV, and it was observed to change with annealing. All of the as-deposited and annealed SnS films had orthorhombic structures. The optical phonon modes to orthorhombic SnS phases were determined by Raman shifts. The carrier type of all SnS films was identified as p-type using Hall measurement, and the changing carrier concentration, mobility, and resistivity values of the films were investigated depending on annealing conditions. The p-type SnS film can be used as an alternative material for the absorber layer in p-n heterojunction solar cell applications.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available