Performance optimization of AlGaAs/GaAsBiN resonant tunneling diode

The GaAsBiN denoted highly mismatched alloy is among the new material that has drawn attention regarding its special physical properties. The co-alloying of GaAs by simultaneous Bi and N atoms offers the possibility to reduce rapidly the bandgap energy and adapt the lattice parameter to the substrate. In this vision, we have exploited this material for application in resonant tunneling diodes. A prototype of a resonant tunneling diode based on zero mismatched AlxGa1-xAs/GaAs1(-y-z)N(z)Bi(y) quantum structure is adopted in order to study its quantitative performance. The matched structure is obtained by relating x, y, and z compositions. Different structural (width of well, barrier and spacer) and electrical (doping level in spacer) parameters are optimized to obtain a maximum value of the peak to valley current ratio deduced from the calculated J-V characteristics. Also, we have investigated the effect of Bi (so N) composition on the response of the diode. Our calculation proves that the studied diode presents a high performance compared to standard ones such as AlGaAs/GaAs, InGaAs/GaAs, and AlGaN/GaN.

Automated summary

The GaAsBiN alloy, known as a highly mismatched alloy, has attracted attention due to its special physical properties. By co-alloying GaAs with Bi and N atoms, it is possible to reduce the bandgap energy quickly and adjust the lattice parameter to the substrate. In this study, a resonant tunneling diode prototype based on a zero mismatched AlxGa1-xAs/GaAs1(-y-z)N(z)Bi(y) quantum structure was developed and optimized to achieve superior performance compared to standard diodes.