Journal
OPTICS AND LASER TECHNOLOGY
Volume 152, Issue -, Pages -Publisher
ELSEVIER SCI LTD
DOI: 10.1016/j.optlastec.2022.108150
Keywords
GaAs; InGaAs nanowire; quantum dot hybrid; structure nanolaser; Four-level two-electron model; Threshold; Purcell factor
Categories
Funding
- Foundation of China [61774021, 61935003]
- National Key Research and Development Program of China [2018YFB2200104]
- Beijing Municipal Science and Technology Commission [Z191100004819012]
- Fund of State Key Labora-tory of Information Photonics and Optical Communications (Beijing University of Posts and Telecommunications) , P. R. China [IPOC2020ZZ01]
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A core-shell GaAs/InGaAs nanowire/quantum dot hybrid structure nanolaser is proposed in this study, which can enhance the spontaneous radiation rate of quantum dots to achieve higher laser intensity while reducing the threshold, paving the way for the development of ultra-small low-consumption near infrared lasers.
A core-shell GaAs/InGaAs nanowire/quantum dot hybrid structure nanolaser is proposed and studied by the finite-difference time-domain method. The results show that the coupled nanowire cavity-emitter system enables enhancement of the spontaneous radiation rate of quantum dots, resulting in a high Purcell factor of 15.5 at a diameter of 330 nm. Due to the quantum confinement and reduced propagation loss, the hybrid structure laser exhibits a threshold lower by 1-2 magnitudes than that of the pure nanowire laser. In addition, by incorporating multiple quantum dots, the lasing intensity is significantly enhanced at the expense of threshold. This work may pave the way for the development of ultra-small low-consumption near infrared lasers and related microsystems.
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