Self-powered photodetector functionalized by SnS quantum dots

Self-powered photodetectors based on layered semiconductors have captivated huge attention owing to low-powered consumption and fast photo-switching. Herein, we report two step facile synthesis of SnS quantum dots by hydrothermal growth and liquid phase exfoliation technique. Grown SnS quantum dots have ortho-rhombic crystal structure with (040) preferred orientation. Subsequently, ITO/SnS/ITO photodetector is fabri-cated and exploited for photo-switching in spectral range from 390 to 780 nm. Photodetector has exhibited excellent self-powered photoresponse with fast detection ability with response time as small as 80 ms. Photo-responsivity and specific detectivity of 2.04 mA/W and 0.85 x 10(9) Jones are achieved for self-powered pho-todetection, respectively. Finally, present research advocates the enormous progress in the field of self-powered opto-electronics.

Automated summary

Self-powered photodetectors based on SnS quantum dots have been synthesized through a two-step hydrothermal growth and liquid phase exfoliation technique. The resulting device, ITO/SnS/ITO photodetector, exhibits excellent self-powered photoresponse in the spectral range of 390-780 nm.