Experimental validation of different PV technologies using a physical-based model

In this work, a simple, compact, and accurate model for PV is introduced. The introduced model used the five-parameter approximation that accounts for both irradiance and temperature variations. The introduced model studied the effect of semiconductor parameters such as doping level, electron, and whole mobilities. The model is verified experimentally using electronic power load at different levels of irradiance and temperature. Also, an integrated module using Simulink simulation is introduced of about 1% error compared to the experimental results. In this work, we used four different PV modules to verify the introduced model. The model accuracy of the proposed reaches 0.85% at different levels of temperature and irradiance of 1000 W/m(2).

Automated summary

This paper introduces a simple, compact, and accurate model for PV that takes into account both irradiance and temperature variations. It examines the effect of semiconductor parameters on the model and verifies its accuracy experimentally. An integrated module using Simulink simulation with an error of about 1% compared to experimental results is also introduced.