4.5 Article

Investigation on the optical and electrical performance of aluminium doped gallium oxide thin films

Journal

OPTICAL AND QUANTUM ELECTRONICS
Volume 54, Issue 8, Pages -

Publisher

SPRINGER
DOI: 10.1007/s11082-022-03851-0

Keywords

PVD (physical vapor deposition); RF (radio frequency) magnetron sputtering; Gallium oxide; Aluminum; Europium; Density functional theory (DFT)

Funding

  1. Science and Engineering Research Board, Dept. of Science and Technology [EMR/2016/002927]

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This study focuses on fabricating amorphous gallium oxide through RF plasma sputtering and investigates the effects of metal doping and substrate preheating on its optical and electrical properties. The results show that aluminum doping significantly improves the mobility and conductivity of gallium oxide thin films, while europium doping does not have a noticeable impact.
Gallium oxide is an extensively researched wide band gap material that has numerous applications in optoelectronic devices. This article focuses on fabrication of amorphous gallium oxide (a-gallium oxide) deposited by RF plasma sputtering at low temperature on glass substrates to fabricate large area flexible electronics. Particularly, this work aims to improve their optical and electrical performances by metal doping as well as substrate preheating. Here, the properties of 9.5% aluminium doped a-Ga2O3 and 6.1% europium doped a-Ga2O3, grown by co-sputtering on soda lime glass substrate at 400 degrees C were analyzed. The thin films produced were nano-structured with an average grain size of similar to 12 nm. The maximum optical transmittance in the UV-vis range for 9.5% Al and 6.1% Eu doped a-Ga2O3 is 82% and 84%, respectively. Although the variations in optical band gap are not appreciable with doping Al and Eu to undoped a-Ga2O3 -3.98 eV, their electronic properties show tremendous difference. Hall effects measurements show that by doping with 9.5% Al, the a-gallium oxide thin films record an increase in both mobility and conductivity of 2 orders. On the other hand, the 6.1% Eu doped a-Ga2O3 does not show any appreciable change in both mobility and conductivity. This was further investigated through first principle density function theory (DFT) to correlate the structure to its properties for both the dopants. Therefore, aluminium doping in a-gallium oxide shows potential towards its application in flexible and cheaper electronic devices.

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