Ultrastable near-infrared perovskite light-emitting diodes

Perovskite light-emitting diodes are an emerging light source technology. However, similar to perovskite solar cells, poor operational stability remains an obstacle for commercial applications. Here we demonstrate ultrastable and efficient near-infrared (similar to 800 nm) perovskite light-emitting diodes with record-long operational lifetimes (T-50 extrapolated) of 11,539 h (similar to 1.3 years) and 32,675 h (similar to 3.7 years) for initial radiance (or current densities) of 3.7 W sr(-1) m(-2) (similar to 5.0 mA cm(-2)) and 2.1W sr(-1) m(-2) (similar to 3.2 mA cm(-2)), respectively, with even longer lifetimes forecasted for lower radiance. Key to this stability is the introduction of a dipolar molecular stabilizer, which interacts with the cations and anions at the perovskite grain boundaries. This suppresses ion migration under electric fields, preventing the formation of lead iodide, which mediates the phase transformation and decomposition of alpha-FAPbI(3) perovskite. These results remove the critical concern that halide perovskite devices may be intrinsically unstable, paving the path towards industrial applications.

Automated summary

This study demonstrates ultrastable and efficient perovskite light-emitting diodes for near-infrared light source. The introduction of a dipolar molecular stabilizer enhances the stability by preventing phase transformation and decomposition of the perovskite.